TITLE

Photoluminescence study of anodized porous Si after HF vapor phase etching

AUTHOR(S)
Shih, S.; Jung, K.H.; Kwong, D.L.; Kovar, M.; White, J.M.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the mechanism of photoluminescence (PL) shift by hydrofluoric vapor phase etching in oxygen ambient. Efficiency of vapor phase etching; Role of surface passivation on the PL shift; Use of the Fourier-transform infrared spectroscopy.
ACCESSION #
4323136

 

Related Articles

  • Atomic control and characterization of surface defect states of TiO2 terminated SrTiO3 single crystals. Kareev, M.; Prosandeev, S.; Liu, J.; Gan, C.; Kareev, A.; Freeland, J. W.; Min Xiao; Chakhalian, J. // Applied Physics Letters;8/11/2008, Vol. 93 Issue 6, p061909 

    By using an alternative wet-etch procedure, we have obtained high-quality atomically flat TiO2 terminated surfaces of SrTiO3 single crystals with the morphology equivalent to that of the conventional wet-etch methods. By applying a combined power of photoluminescence (PL) spectroscopy,...

  • Reactive-ion- and plasma-etching-induced extended defects in silicon studied with photoluminescence. Weman, H.; Lindström, J. L.; Oehrlein, G. S.; Svensson, B. G. // Journal of Applied Physics;1/15/1990, Vol. 67 Issue 2, p1013 

    Presents a study that investigated the defects introduced by reactive-ion etching and plasma etching using deuterium in boron-doped silicon with the photoluminescence technique. Photoluminescence measurements; Secondary-ion mass spectrometry analysis; Shifts in the energy position of the boron...

  • Various types of nonbridging oxygen hole center in high-purity silica glass. Munekuni, Shuji; Yamanaka, Toshihisa; Shimogaichi, Yasushi; Tohmon, Ryoichi; Ohki, Yoshimichi; Nagasawa, Kaya; Hama, Yoshimasa // Journal of Applied Physics;8/1/1990, Vol. 68 Issue 3, p1212 

    Presents a study which demonstrated the probable existence of different forms of nonbridging oxygen hole center (NBOHC). Experimental procedures; Results and discussion; Details on 1.9-eV photoluminescence band of NBOHC.

  • Formation and decay of nonbridging oxygen hole centers in SiO[sub 2] glasses induced by F[sub 2] laser irradiation: In situ observation using a pump and probe technique. Kajihara, Koichi; Skuja, Linards; Hirano, Masahiro; Hosono, Hideo // Applied Physics Letters;9/17/2001, Vol. 79 Issue 12, p1757 

    Formation and decay of nonbridging oxygen hole centers (NBOHC, an oxygen dangling bond) in SiO[sub 2] glasses by F[sub 2] excimer laser (7.9 eV) irradiation were in situ analyzed by monitoring 1.9 eV photoluminescence of NBOHC using a pump and probe technique. In wet SiO[sub 2], the SiO–H...

  • Strong modification of photoluminescence in erbium-doped porous silicon microcavities. Zhou, Y.; Snow, P. A.; Snow, P.A.; Russell, P. St. J. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    A microcavity composed of porous silicon multilayer mirrors was electrochemically etched and doped with erbium. Measurements of the reflectivity and photoluminescence spectra are presented. Thermal processing under a nitrogen atmosphere optically activated the erbium ions. Photopumping yielded...

  • Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar. Pearton, S. J.; Chakrabarti, U. K.; Kinsella, A. P.; Johnson, D.; Constantine, C. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1424 

    Plasma etching of InP in a microwave (2.45 GHz) electron cyclotron resonance (ECR) CH4/H2/Ar discharge has been investigated as a function of additional radio frequency (rf, 13.56 MHz) self-biasing of the sample. The etch rate of InP in a 1 mTorr, 250 W CH4/H2/Ar (5/15/7) ECR discharge increases...

  • High efficiency chemical etchant for the formation of luminescent porous silicon. Kelly, Michael T.; Chun, Jonathan K.M. // Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1693 

    Describes a chemical etchant for the formation of a porous silicon. Comparison of the photoluminescent intensity between hydrofluoric acid (HF) solutions with ion NO[sup +] and nitric acid/HF based stain etches; Improvement of the etch induction time; Identification of NO[sup +] as the active...

  • Blue light emission from silicon surfaces prepared by spark-erosion and related techniques. Ruter, D.; Kunze, T. // Applied Physics Letters;5/30/1994, Vol. 64 Issue 22, p3006 

    Examines the photoluminescence (PL) of silicon surfaces treated by spark-erosion and related techniques as a function of gas composition and pressure. Observation of PL emission wavelength range and decay time; Absence of significant PL emission in the red spectral range; Implication of the dry...

  • Plasma-induced damage to n-type GaN. Choi, H. W.; Choi, H.W.; Chua, S. J.; Chua, S.J.; Raman, A.; Pan, J. S.; Pan, J.S.; Wee, A. T. S.; Wee, A.T.S. // Applied Physics Letters;9/18/2000, Vol. 77 Issue 12 

    The effects of plasma etching on 1/f noise and photoluminescence (PL) characteristics of n-GaN have been investigated. A reduction of 1/f noise was observed after plasma exposure, a result of enhanced passivation of the reactive surface. This is attributed to the removal of carbon and the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics