TITLE

Secondary ion mass spectrometry of InGaAs/InP (100) multiple layers grown by chemical beam epitaxy

AUTHOR(S)
Williams, M.D.; Chiu, T.H.; Storz, F.G.; Shunk, S.C.; Ferguson, J.F.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/19/1993, Vol. 62 Issue 16, p1884
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effect of substrate temperature on the composition and growth rate of multilayers grown by chemical beam epitaxy (CBE). Use of the secondary ion mass spectrometry; Details on the CBE apparatus; Relation between the gallium/indium ratio and the arsine flow rate.
ACCESSION #
4323128

 

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