Gas phase reactions of trimethylamine alane in low pressure organometallic vapor phase epitaxy

Pitts, B.L.; Emerson, D.T.; Shealy, J.R.
April 1993
Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1821
Academic Journal
Examines the effects of gas phase reactions of trimethylamine alane on aluminum gallium arsenide films grown by low pressure organometallic vapor phase epitaxy. Formation of nonvolatile compounds upstreams; Reduction of growth rate; Degradation of deposition uniformity.


Related Articles

  • The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure. Boshta, M.; Morchshakov, V.; Bárner, K.; Braunstein, R. // Research Letters in Materials Science;2008, p1 

    The transient thermoelectric effects (TTEs) method is used to measure the ambipolar space charge built up in a low-pressure hot wire chemical vapor deposition (HWCVDs) technique a-Si:H layer deposited on a glass substrate. The stage 2 TTE-transients yield the trap state density difference with...

  • Tl incorporation in InSb and lattice contraction of In[sub 1-x]Tl[sub x]Sb. Lee, J. J.; Razeghi, M. // Applied Physics Letters;1/17/2000, Vol. 76 Issue 3 

    Ternary In[sub 1-x]Tl[sub x]Sb thin films are grown by low pressure metalorganic chemical vapor deposition in the high In composition region. Infrared photoresponse spectra of the In[sub 1-x]Tl[sub x]Sb epilayers show a clear shift toward a longer wavelength compared to that of InSb. Tl...

  • Epitaxial PbTiO[sub 3] thin films grown by organometallic chemical vapor deposition. de Keijser, M.; Dormans, G.J.M.; Cillessen, J.F.M.; de Leeuw, D.M.; Zandbergen, H.W. // Applied Physics Letters;6/10/1991, Vol. 58 Issue 23, p2636 

    Reports that epitaxial PbTiO[sub 3] thin films have been grown on (001)SrTiO[sub 3] substrates by organometallic chemical vapor deposition. Use of the precursors titanium-iso-propoxide and tetra-ethyl-lead; Growth temperature for the films; Confirmation of the epitaxial nature of the...

  • Characteristics of quenched Y-Ba-Cu-O thin films on SrTiO3 (100),(110) grown by organometallic chemical vapor deposition. Tsuruoka, T.; Takahashi, H.; Kawasaki, R.; Kanamori, T. // Applied Physics Letters;5/1/1989, Vol. 54 Issue 18, p1808 

    A thin Y-Ba-Cu-O film was formed by the organometallic chemical vapor deposition (OMCVD) method. The substrates used were (100) and (110) SrTiO3. After forming Y-Ba-Cu-O at 800 °C, it was cooled at a rate of 100 °C/min in O2 under 1 atm. This film was c-axis oriented, with its (001)...

  • Cubic-phase GaN light-emitting diodes. Hui Yang; Zheng, L.X.; Li, J.B.; Wang, X.J.; Xu, D.P.; Wang, Y.T.; Hu, X.W.; Han, P.D. // Applied Physics Letters;4/26/1999, Vol. 74 Issue 17, p2498 

    Demonstrates the feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition. Characterization of the optical quality of the GaN films by room-temperature photoluminescence measurements; Structural quality of the films.

  • Novel metalorganic chemical vapor deposition system for GaN growth. Nakamura, Shuji; Harada, Yasuhiro; Seno, Masayuki // Applied Physics Letters;5/6/1991, Vol. 58 Issue 18, p2021 

    Reports that a novel metalorganic chemical vapor deposition system has been developed. Growth of a GaN thin film attempted using the system; Carrier concentration and Hall mobility.

  • Study of gain mechanisms in AlGaN in the temperature range of 30-300 K. Lam, J. B.; Lam, J.B.; Bidnyk, S.; Gainer, G. H.; Gainer, G.H.; Little, B. D.; Little, B.D.; Song, J. J.; Song, J.J.; Yang, W. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    We report the results of an experimental study of the stimulated emission (SE) properties of AlGaN epilayers grown by metalorganic chemical vapor deposition under high optical excitation conditions in the temperature range of 30-300 K. The band gap and energy position of spontaneous and SE peaks...

  • Organometallic chemical vapor deposition of high Tc superconducting films using a volatile, fluorocarbon-based precursor. Zhao, Jing; Dahmen, Klaus-Hermann; Marcy, Henry O.; Tonge, Lauren M.; Marks, Tobin J.; Wessels, Bruce W.; Kannewurf, Carl R. // Applied Physics Letters;10/31/1988, Vol. 53 Issue 18, p1750 

    Uniform films of the high Tc superconductor YBa2Cu3O7-δ have been prepared by organometallic chemical vapor deposition using the volatile metalorganic precursors Cu(acetylacetonate)2, Y(dipivaloylmethanate)3, and Ba(heptafluorodimethyloctanedionate)2. With argon as a carrier gas and water...

  • In situ growth of highly oriented Pb(Zr[sub 0.5]Ti[sub 0.5])O[sub 3] thin films by low-temperature metal–organic chemical vapor deposition. Bai, G.-R.; Tsu, I-Fei; Wang, A.; Foster, C. M.; Murray, C. E.; Dravid, V. P. // Applied Physics Letters;3/30/1998, Vol. 72 Issue 13 

    Highly oriented, polycrystalline Pb(Zr[sub 0.5]Ti[sub 0.5])O[sub 3] (PZT) thin films were successfully grown on RuO[sub 2]/SiO[sub 2]/(001)Si using metal–organic chemical vapor deposition (MOCVD) at 525 °C. The orientation of the PZT film was controlled by using MOCVD-deposited highly...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics