TITLE

Gas phase reactions of trimethylamine alane in low pressure organometallic vapor phase epitaxy

AUTHOR(S)
Pitts, B.L.; Emerson, D.T.; Shealy, J.R.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1821
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effects of gas phase reactions of trimethylamine alane on aluminum gallium arsenide films grown by low pressure organometallic vapor phase epitaxy. Formation of nonvolatile compounds upstreams; Reduction of growth rate; Degradation of deposition uniformity.
ACCESSION #
4323111

 

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