Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon

Seo, Y.H.; Lee, H.-J.; Jeon, H.I.; Oh, D.H.; Nahm, K.S.; Lee, Y.H.; Suh, E.-K.; Lee, H.J.; Kwang, Y.G.
April 1993
Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1812
Academic Journal
Examines the photoluminescence, Raman scattering, and infrared absorption in porous silicon. Revelation of crystalline or intermediate phases; Relation of hydrogen and oxygen atomic configuration to the light emitting characteristics of the silicon layers; Effect of thermal oxidation on trichloroethylene.


Related Articles

  • Light absorption and photoluminescence of porous silicon. Obraztsov, A. N.; Karavanskii, V. A.; Okushi, H.; Watanabe, H. // Semiconductors;Aug98, Vol. 32 Issue 8, p896 

    The results of an experimental study of Raman scattering, photoluminescence, and light absorption and reflection in porous silicon layers obtained by electrochemical etching of singlecrystal wafers are presented. It is concluded on the basis of an analysis of the experimental data that the...

  • Depth-resolved microspectroscopy of porous silicon multilayers. Manotas, S.; Agullo-Rueda, F. // Applied Physics Letters;8/16/1999, Vol. 75 Issue 7, p977 

    Describes the measurement of depth-resolved microphotoluminescence (PL) and micro-Raman spectra on the cross section of porous silicon multilayers to sample different layer depths. Influence of high porosity layer on PL emission band strength; Fitting of the band to the phonon confinement model.

  • Radiation hardness of porous silicon. Ushakov, V. V.; Dravin, V. A.; Mel’nik, N. N.; Karavanskiı, V. A.; Konstantinova, E. A.; Timoshenko, V. Yu. // Semiconductors;Sep97, Vol. 31 Issue 9, p966 

    The effect of irradiation by 300-keV Ar[sup +] ions on the properties of electrochemically produced porous silicon is studied at doses of 5 x 10[sup 14]-1 x 10[sup 16] cm[sup -2]. Raman scattering and photoluminescence data are used to show that the radiation hardness of porous silicon layers is...

  • Depth-resolved micro-Raman study of porous silicon at different oxidation states. Moreno, J.D.; Agullo-Rueda, F. // Applied Physics Letters;10/13/1997, Vol. 71 Issue 15, p2166 

    Measures photoluminescence (PL) and Raman spectra along a cross section of porous silicon films at different oxidation times. Application of anodic current transients; Determination of average crystallite size; Independence of PL emission energy and crystallite size from the layer depth.

  • Raman and high-pressure photoluminescence studies on porous silicon. Sood, A. K.; Jayaram, K.; Muthu, D. Victor S. // Journal of Applied Physics;11/15/1992, Vol. 72 Issue 10, p4963 

    Focuses on a study which examined the absence of correlation between the blue shift of the visible photoluminescence band and red shift of the Raman phonon line in porous silicon. Information on porous silicon prepared by electrochemical anodic etching; Methodology of the study; Results and...

  • Photoluminescence and Raman studies of porous silicon in polymethyl methacrylate. Guha, S.; Hendershot, G.; Peebles, D.; Steiner, P.; Kozlowski, F.; Lang, W. // Applied Physics Letters;1/31/1994, Vol. 64 Issue 5, p613 

    Presents photoluminescence and Raman study of porous silicon (Si) in polymethyl methacrylate (PS:PMMA) disks. Factors attributed to the observed strong PL; Comparison of PS:PMMA PL with porous Si layer (PSL) PL; Association of PSL luminescence with Si nanocrystallites.

  • Optical properties and luminescence mechanism of oxidized free-standing porous silicon films. Xu, Dongsheng; Guo, lin // Journal of Applied Physics;8/15/1999, Vol. 86 Issue 4, p2066 

    Outlines an experiment that have systematically studied the evolution of the optical properties of free-standing porous silicon films during external oxidation by measuring of the photoluminescence (PL), infrared, optical absorption and Raman scattering spectra. Experiment; PL intensity and...

  • Correlation of Raman and photoluminescence spectra of porous silicon. Tsu, R.; Shen, H. // Applied Physics Letters;1/6/1992, Vol. 60 Issue 1, p112 

    Examines the correlation between the Raman and photoluminescence spectra of porous silicon. Role of microstructures in porous silicon; Effect of luminescence peak in photon energy on the Raman feature; Development of the transverse and longitudinal optical modes.

  • The nature of red emission in porous silicon. Khomenkova, L. Yu.; Korsunska, N. E.; Bulakh, B. M.; Sheinkman, M. K.; Stara, T. R. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2005, Vol. 8 Issue 1, p60 

    The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was observed. It is shown that only one of them, which causes infrared emission...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics