Effect of band structure on etch-stop layers in the photoelectrochemical etching of

Khare, R.; Young, D.B.; Snider, G.L.; Hu, E.L.
April 1993
Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1809
Academic Journal
Investigates the effect of band structure on etch-stop layers in the photoelectrochemical etching of GaAs/AlGaAr semiconductors. Differences in material composition; Distribution of photogenerated carriers; Use of a helium-neon laser and a titanium sapphire laser as light sources.


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