TITLE

Effect of band structure on etch-stop layers in the photoelectrochemical etching of

AUTHOR(S)
Khare, R.; Young, D.B.; Snider, G.L.; Hu, E.L.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1809
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the effect of band structure on etch-stop layers in the photoelectrochemical etching of GaAs/AlGaAr semiconductors. Differences in material composition; Distribution of photogenerated carriers; Use of a helium-neon laser and a titanium sapphire laser as light sources.
ACCESSION #
4323106

 

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