TITLE

Dependence of steady-state defect density in hydrogenated amorphous silicon on carrier

AUTHOR(S)
Hata, Nobuhiro; Ganguly, Gautam; Matsuda, Akihisa
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1791
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the dependence of steady-state defect density in hydrogenated amorphous silicon on carrier generation rate. Control of the illumination temperature; Increase of defect density; Use of pulse light-soaking technique to reach a steady-state defect density.
ACCESSION #
4323100

 

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