TITLE

X-ray diffraction investigation of single step and step-graded SiGe alloy buffers for the growth

AUTHOR(S)
Koppensteiner, E.; Hamberger, P.; Bauer, G.; Pesek, A.; Kibbel, H.; Presting, H.; Kasper, E.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1783
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Characterizes the structural properties of short period Si[sub 6]Ge[sub 4] superlattices. Growth of the samples by molecular beam epitaxy; Information on the strain status of the silicon germanide buffer and superlattice layer; Relaxation of layers with different germanium content.
ACCESSION #
4323097

 

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