New nonthermal mechanism for negative differential resistance in heterojunction bipolar transistors

Lee, T.-W.; Houston, P.A.
April 1993
Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1777
Academic Journal
Proposes a mechanism for the explanation of negative differential resistance in heterojunction bipolar transistors. Reproduction of the correct experimentally observed shape; Consideration of emitter-base band structure; Importance of the variation of effective spike height.


Related Articles

  • Negative output differential resistance in AlGaAs/GaAs heterojunction bipolar transistors. Gao, G.B.; Fan, Z.F. // Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p198 

    Presents a thermal-electrical model describing the negative differential resistance in aluminum gallium arsenide (AlGaAs) and gallium arsenide (GaAs) heterojunction bipolar transistors. Inclusion the base band-gap shrinkage in the model; Examination of the temperature dependence of AlGaAs and...

  • A High Precision Bandgap Reference Used in Power Management ICs. Gu Shurong; Wu Xiaobo; Yan Xiaolang // Recent Advances in Engineering & Computer Science;2007, Issue 62, p194 

    A 2.5V high precision BiCMOS bandgap reference with supply voltage range of 6V to 18V was proposed and realized. It could be applied to lots of Power Management ICs (Intergrated Circuits) due the high voltage. By introducing a preregulated current source, the PSRR (Power Supply Rejection Ratio)...

  • Parameter Optimization of Virtual Impedance for Parallel Inverter. Ping WANG; Liu YANG // Advanced Materials Research;2014, Vol. 986-987, p1973 

    This paper deals with parameter optimization of virtual impedance of parallel inverter. Conventional design methods determine parameters by observing the changes of amplitude-frequency and phase-frequency curves of the equivalent impedance. However, those methods always neglect the dynamic...

  • Device characteristics of carbon nanotube transistor fabricated by direct growth method. Inami, Nobuhito; Mohamed, Mohd Ambri; Shikoh, Eiji; Fujiwara, Akihiko // Applied Physics Letters;6/16/2008, Vol. 92 Issue 24, p243115 

    We have fabricated carbon nanotube (CNT) field-effect transistors (FETs) by direct growth of single-wall CNTs between the source and drain electrodes, and investigated their device characteristics. The FETs show ambipolar operation. The temperature and bias voltage dependence of device...

  • 500-V IGBTs useful in high-voltage hard-switching apps. Kiraly, Laszlo // Electronic Design;6/27/94, Vol. 42 Issue 13, Special Analog Issue p56 

    Describes the uses of insulated gate bipolar transistors (IGBT) in high-voltage electronic applications. Switching characteristics; Advantages over other switching apparatus; Comparison of capabilities with MOFSETs.

  • Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar... Deen, M. Jamal; Rumyantsev, S.; Bashir, R.; Taylor, R. // Journal of Applied Physics;7/1/1998, Vol. 84 Issue 1, p625 

    Provides information on a study investigating low frequency noise characteristics of high voltage, high performance complementary polysilicon emitter bipolar transistors. Methodology used to conduct the study; Information on the dependence of low frequency noise on the base biasing resistance;...

  • Gummel-Poon model for Npn heterojunction bipolar phototransistors. Frimel, S.M.; Roenkel, K.P. // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3581 

    Describes a Gummel-Poon model for single heterojunction Npn bipolar phototransistors. Effects of dc base biases on the current and optical gains; Determination of the excess electron concentration at the emitter end of the quasineutral base; Matching of the thermionic field emission across the...

  • What's all this bipolar stuff, anyhow? Pease, Bob // Electronic Design;8/7/95, Vol. 43 Issue 16, p95 

    Discusses the applications and technology of bipolar transistors. Knowledge of AT&T Labs senior staff scientist Ken Sodomsky on bipolars; Components of bipolars; Lecture series on bipolars.

  • Noise correlation measurements in bipolar transistors. I. Theoretical expressions and extracted... Jarrix, S.; Delseny, C. // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2651 

    Part I. Reports that voltage noise was measured at the input and at the output of common-emitter mounted bipolar transistors. Equivalent circuit and theoretical expressions; Theoretical expressions of the spectral densities; Emitter series resistance and base ideality factor extraction;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics