TITLE

8X18 top emitting independently addressable surface emitting laser arrays with uniform threshold

AUTHOR(S)
Vakhshoori, D.; Wynn, J.D.; Zydzik, G.J.; Leibenguth, R.E.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1718
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the fabrication of vertical cavity surface emitting laser arrays (VC-SELA) with low threshold voltage. Functions of VC-SELA elements; Use of ion implantation in the realization of a large VC-SELA; Calibration of a Varian Gen II system to grow a VC-SEL.
ACCESSION #
4323075

 

Related Articles

  • Two-dimensional delineation of ultrashallow junctions obtained by ion implantation and excimer laser annealing. Privitera, Vittorio; Spinella, Corrado; Fortunato, Guglielmo; Mariucci, Luigi // Applied Physics Letters;7/24/2000, Vol. 77 Issue 4 

    Junctions shallower than 100 nm, obtained by ion implantation and excimer laser annealing, have been characterized in two dimensions by transmission electron microscopy (TEM) on chemically treated samples. The chemical treatment selectively removes silicon as a function of the B concentration,...

  • Index-guided operation in narrow stripe InGaAs-GaAs strained-layer quantum well heterostructure... Alwan, J.J.; Honig, J.; Favaro, M.E.; Beernink, K.J.; Klatt, J.L.; Averback, R.S.; Coleman, J.J.; Bryan, R.P. // Applied Physics Letters;5/13/1991, Vol. 58 Issue 19, p2058 

    Demonstrates that the stable index-guided operation of variable stripe strained-layer InGaAs-GaAs-AlGaAs lasers achieved by MeV oxygen implantation-induced disorder of the active region. Fabrication of stripe geometry lasers by oxygen implantation; Comparison with unimplanted, oxide-defined...

  • Gain coupled distributed feedback lasers realized by masked implantation enhanced intermixing. Kaden, C.; Gauggel, H.-P. // Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3170 

    Develops a gain couple distributed feedback laser using masked ion implantation enhanced intermixing. Fabrication of the lasers in the indium gallium arsenide (InGaAs)/InGa aluminum As system; Laser emission with a single mode yield; Comparison of results with the theoretical description of...

  • Ultrafast absorber saturation process and short pulse formation in injection lasers. Zaitsev, S.V.; Gordeev, N. Yu. // Journal of Applied Physics;11/15/1998, Vol. 84 Issue 10, p5441 

    Presents a study that investigated the nature of lasing threshold in passively Q-switched GaAs/AlGaAs lasers with saturable absorbers formed by heavy ion implantation. One successful method of forming the saturable absorber section; Information on input-output characteristics of passively...

  • Transverse modes and lasing characteristics of selectively grown vertical cavity semiconductor lasers. Orenstein, M.; Satuby, Y.; Ben-Ami, U.; Harbison, J. P. // Applied Physics Letters;9/23/1996, Vol. 69 Issue 13, p1840 

    Vertical-cavity surface emitting lasers (VCSELs) were grown by molecular beam epitaxy over openings in a SiN4 mask, deposited on a GaAs wafer. We obtained ready to use lasers and laser arrays, laterally defined by the polycrystalline, highly resistive material grown over the SiN4 laser. The...

  • Pulsed laser-induced changes in structural and electrical properties of Pb0.8Sn0.2Te thin films. Dawar, A. L.; Jagadish, C.; Mathur, P. C. // Journal of Applied Physics;10/15/1986, Vol. 60 Issue 8, p2994 

    Presents a study that confinef the laser processing of semiconductors using carrier wave as well as pulsed lasers to the problem of electrically activating the dopants and removing the damage caused by ion implantation of the dopants. Stages of recrystallization; Variation of average grain size...

  • Long wavelength (1.3 mum) vertical-cavity surface-emitting lasers with a wafer-bonded mirror and.... Qian, Y.; Zhu, Z.H.; Lo, Y.H.; Huffaker, D.L.; Deppe, D.G.; Hou, H.Q.; Hammons, B.E.; Lin, W.; Tu, Y.K. // Applied Physics Letters;7/7/1997, Vol. 71 Issue 1, p25 

    Examines a design for long wavelength vertical-cavity surface-emitting lasers with wafer-bonded mirror and an oxygen-implanted confinement region. Fabrication process; Comparison between oxygen and proton implantation; Impact of multiple transverse mode operation on lasing spectra linewidth.

  • Two-photon photocurrent imaging of vertical cavity surface emitting lasers. Xu, Chris; Chirovsky, Leo M. F.; Hobson, W. S.; Lopata, J.; Knox, Wayne H.; Cunningham, John E.; Jan, William Y.; D'Asaro, L. A. // Applied Physics Letters;3/20/2000, Vol. 76 Issue 12, p1510 

    We show that two-photon photocurrent imaging can be used to nondestructively study vertical cavity surface emitting lasers on a microscopic level. In particular, we study the aperture isolation created by shallow ion implantation. The combination of two-photon backside imaging and a probe...

  • Picosecond semiconductor lasers with a multisection saturable absorber, fabricated by heavy ion implantation. Venus, G. B.; Gadzhiev, I. M.; Gubenko, A. E.; Il’inskaya, N. D.; Portnoı, E. L. // Technical Physics Letters;Jul99, Vol. 25 Issue 7, p506 

    A method of implanting high-energy heavy ions across the emitter layer of a semiconductor laser has been developed to create distributed regions of ultrafast saturable absorber integrated into the cavity of a quantum-well laser. This method was used to fabricate picosecond laser diodes having...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics