TITLE

ZnSe-ZnCdSe quantum confined Stark effect modulators

AUTHOR(S)
Wang, S.Y.; Kawakami, Y.; Simpson, J.; Stewart, H.; Prior, K.A.; Cavenett, B.C.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/12/1993, Vol. 62 Issue 15, p1715
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines ZnSe-ZnCdSe quantum confined Stark effect modulators. Calculation of quantum well parameters through the method of Van de Walle; Effects of multiple quantum operators on modulators; Use of photovoltage spectroscopy and optical absorption measurements in observing the modulator structures.
ACCESSION #
4323074

 

Related Articles

  • Electric field screening in a multiple-quantum-well optically addressed spatial light modulator. Smith, S.L.; Hesselink, L. // Applied Physics Letters;5/27/1996, Vol. 68 Issue 22, p3117 

    Examines the transmission and photocurrent of a multiple-quantum-well optically addressed spatial light modular measurement. Discussion of the evidence of bipolar transport; Estimation of the large internal fields the photocurrent response saturates and corresponding screening rate; Reason for...

  • Absorptive electro-optic spatial light modulators: Effect of well profile on device performance. Sanders, G. D.; Bajaj, K. K. // Applied Physics Letters;9/4/1989, Vol. 55 Issue 10, p930 

    We report the effect of well profile on the performance of absorptive electro-optic spatial light modulators based on multiquantum well structures. In particular we calculate the variation in exciton oscillator strength and the absorption coefficient at the signal wavelength as a function of...

  • High-speed all-semiconductor optically addressed spatial light modulator. Tayebati, Parviz; Canoglu, Ergun; Hantzis, Christos; Sacks, Robert N. // Applied Physics Letters;9/22/1997, Vol. 71 Issue 12, p1610 

    Presents a monolithically grown optically addressed multiple quantum well spatial light modulator with high frame rate operation and large sensitivity. Function of the separated detector modulator in reflection mode; Achievement of higher modulation gains at the expense of modulation depth; Use...

  • Electroabsorption in ultranarrow-barrier GaAs/AlGaAs multiple quantum well modulators. Goossen, K.W.; Cunningham, J.E. // Applied Physics Letters;2/28/1994, Vol. 64 Issue 9, p1071 

    Measures the electroabsorption in gallium arsenide (GaAs)/aluminum GaAs multiple quantum well modulators with ultranarrow barriers. Details on the onset of superlattice-type effects at barrier widths; Measurement of photocurrent collection efficiency; Elimination of the resonant coupling for...

  • Optical modulator provides 5000:1 contrast ratio.  // Laser Focus World;Dec94, Vol. 30 Issue 12, p13 

    Reports on the integration of high-speed normal incidence spatial light modulators with other semiconductor devices by multiple quantum wells (MQW). Use of quantum-confined Stark effects by MQW.

  • High contrast ratio asymmetric Fabry-Perot reflection light modulator based on GaAs/InGaAs.... Kezhong Hu; Li Chen; Madhukar, Anupam; Ping Chen; Rajkumar, K.C.; Kian Kaviani; Karim, Zaheed; Kyriakakis, Chris; Tanguay Jr., Armand R. // Applied Physics Letters;8/26/1991, Vol. 59 Issue 9, p1108 

    Presents Fabry-Perot reflection light modulators based on strained GaAs/InGaAs(100) multiple quantum well. Measurement of the high contrast ratio and dynamic range of the materials at room temperature; Quantum efficiency exhibited by the device as a photodetector.

  • Transverse modulators with a record reflection change of >20%/V using asymmetric Fabry–Perot structures. Yan, R. H.; Simes, R. J.; Coldren, L. A.; Gossard, A. C. // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1626 

    An asymmetric Fabry–Perot structure with a multiple quantum well active region is demonstrated to provide a reflection change of >45% for an operating voltage swing of only ∼2 V, with a contrast ratio of more than 15. Photocurrent measurements show that the same devices also work as...

  • Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates. Madhukar, A.; Rajkumar, K. C.; Chen, Li; Guha, S.; Kaviani, K.; Kapre, R. // Applied Physics Letters;11/5/1990, Vol. 57 Issue 19, p2007 

    Growth of low defect density highly strained InxGa1-xAs/GaAs multiple quantum well (MQW) structures of thicknesses suited for application in spatial light modulator (SLM) devices operating in infrared has been thwarted by the occurrence of strain-induced defects. Exploiting the notion of strain...

  • Time response of a tunable-electron-density quantum well and reservoir structure. Jin Wang; Leburton, J.P. // Applied Physics Letters;11/18/1991, Vol. 59 Issue 21, p2709 

    Presents the time response of a tunable-electron-density quantum well and reservoir structure optical modulator. Consideration of three carrier escape mechanisms; Comparison between forward and reverse biases; Agreement of the calculated escape time with the experimental data.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics