TITLE

Influence of dose rate and temperature on the accumulation of Si-implantation damage in indium

AUTHOR(S)
Akano, U.G.; Mitchell, I.V.; Shepherd, F.R.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1670
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the influence of dose rate and temperature on accumulation of silicon-implantation damage in InP crystal. Use of the Rutherford backscattering and channeling technique in analyzing residual damage; Effect of the beam flux on damage accumulation; Impact of Si beam flux on the activation of silicon implants.
ACCESSION #
4323061

 

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