Controlled passivation of GaAs by Se treatment

Scimeca, T.; Watanabe, Y.; Maeda, F.; Berrigan, R.; Oshima, M.
April 1993
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1667
Academic Journal
Investigates the controlled passivation of GaAs(100) by Se treatment. Assessment of synchrotron radiation photoelectron spectroscopy; Role of substrate temperature in controlling the extent of Se bonding to As and degree of band bending; Dependence of Ga vacancies formation on substrate temperature.


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