TITLE

Controlled passivation of GaAs by Se treatment

AUTHOR(S)
Scimeca, T.; Watanabe, Y.; Maeda, F.; Berrigan, R.; Oshima, M.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1667
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the controlled passivation of GaAs(100) by Se treatment. Assessment of synchrotron radiation photoelectron spectroscopy; Role of substrate temperature in controlling the extent of Se bonding to As and degree of band bending; Dependence of Ga vacancies formation on substrate temperature.
ACCESSION #
4323060

 

Related Articles

  • Simple Requirement to Passivating Film/GaAs Interface for Avalanche Breakdown Suppression. Vainshtein, Sergey; Javadyan, Valeriy; Duan, Gouyong; Tsendin, Konstantin; Kostamovaara, Juha // Annual Journal of Electronics;2011, Vol. 5 Issue 2, p109 

    Shown recently superfast (picosecond range) switching and copious sub-THz emission from a GaAs avalanche n+-p-n0-n+ bipolar junction transistor (BJT) makes the task of premature surface breakdown suppression critically important. Here we show that surface breakdown can be suppressed even for...

  • The structural chemical and electronic properties of a stable GaS/GaAS interface. Cao, X. A.; Hu, H. T. // Journal of Applied Physics;12/15/1999, Vol. 86 Issue 12, p6940 

    Presents a study which examined the chemical, structural, and electronic properties of a stable gallium sulfide passivating layer deposited on gallium arsenide. Experimental procedures; Results and discussion; Conclusion.

  • Wet chemical nitridation of GaAs (100) by hydrazine solution for surface passivation. Berkovits, V. L.; Ulin, V. P.; Losurdo, M.; Capezzuto, P.; Bruno, G.; Perna, G.; Capozzi, V. // Applied Physics Letters;5/20/2002, Vol. 80 Issue 20, p3739 

    A mild wet nitridation procedure using hydrazine-based solutions has been developed for GaAs (100) surface passivation. Both x-ray photoelectron spectroscopy and spectroscopic ellipsometry show that this nitridation procedure results in a very thin, coherent, and homogeneous GaN layer that is...

  • Improved electronic properties of GaAs surfaces stabilized with phosphorous. Viktorovitch, P.; Gendry, M.; Krawczyk, S.K.; Krafft, F.; Abraham, P.; Bekkaoui, A.; Monteil, Y. // Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2387 

    Focuses on a passivation procedure of the gallium arsenide surface based on a thermal treatment under a PH[sub 3] overpressure. Formation of a thin superficial gallium phosphorus layer preventing the formation of arsenic oxide; Indication of the increase in photoluminescence signal.

  • Effect of post-growth cooling ambient on acceptor passivation in carbon-doped GaAs grown by.... Stockman, S.A.; Hanson, A.W.; Jackson, S.L.; Baker, J.E.; Stillman, G.E. // Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1248 

    Investigates the effect of post-growth cooling ambient on acceptor passivation in carbon-doped gallium arsenide (GaAs). Use of metalorganic chemical vapor deposition in GaAs growth; Effect of carbon concentration in the GaAs on passivation; Reactivation of carbon acceptors by annealing.

  • Gallium arsenide passivation through nitridation with hydrazine. Vogt, Kirkland W.; Kohl, Paul A. // Journal of Applied Physics;11/15/1993, Vol. 74 Issue 10, p6448 

    Presents a study which analyzed the passivating films grown on gallium arsenide by direct nitridation with hydrazine using Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis. Uses of surface passivation; Several pretreatments of the gallium arsenide that were made;...

  • Interface-controlled Au/GaAs Schottky contact with surface sulfidation and interfacial hydrogenation. Kang, Min-Gu; Park, Hyung-Ho // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p5204 

    We report a GaAs passivation method using sulfidation and hydrogenation to achieve the Au/GaAs interface free of defective interfacial compounds, through which improves the electrical properties of the Schottky contact. A sulfur-passivated GaAs Schottky diode exhibited improved contact...

  • Ultrashort pulse ultraviolet laser treatment of n(100) GaAs: Microstructural modifications and passivation effects. Railkar, T. A.; Malshe, A. P.; Brown, W. D.; Hullavarad, Shiva S.; Bhoraskar, S. V. // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p4766 

    Gallium arsenide (GaAs) is one of the most important materials among the III-V family, especially in view of its applicability to optoelectronic devices. However, it is known that GaAs, unlike silicon (Si), does not possess a stable native oxide that can passivate and protect the surface. This...

  • Passivation of P[sub b0] and P[sub b1] interface defects in thermal (100) Si/SiO[sub 2] with.... Stesmans, A. // Applied Physics Letters;4/8/1996, Vol. 68 Issue 15, p2076 

    Demonstrates the passivation of P[sub b0] and P[sub b1] interface defects in thermal (100) Si/SiO[Sub2] with molecular hydrogen. Description of the defects by the same defect- H2 reaction-limited kinetic model; Exhibition of a Gaussian spread by P[sub b0] and P[sub b1] around their respective...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics