TITLE

Unipolar avalanche multiplication phenomenon in multiquantum well structures

AUTHOR(S)
Toivonen, M.; Jalonen, M.; Salokatve, A.; Pessa, M.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1664
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Observes the unipolar electron impact ionization and multiplication in photodiodes consisting of multiquantum well heterostructures. Origin of the unipolar avalanche multiplication; Generation of electrons by photon absorption; Scatter of ionized electrons in the barrier layers of the superlattice.
ACCESSION #
4323059

 

Related Articles

  • Impact ionization enhancements in Al[sub x]Ga[sub 1-x]Sb avalanche photodiodes. Grein, C. H.; Grein, C.H.; Ehrenreich, H. // Applied Physics Letters;11/6/2000, Vol. 77 Issue 19 

    The apparent inconsistency among several experiments examining the presence of an enhanced hole to electron impact ionization coefficient ratio in Al[sub x]Ga[sub 1-x]Sb is shown to be associated with the failure to recognize that measurements at high and low electric fields lead to physically...

  • Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode. Banerjee, Koushik; Ghosh, Siddhartha; Mallick, Shubhrangshu; Plis, Elena; Krishna, Sanjay; Grein, Christoph // Applied Physics Letters;5/18/2009, Vol. 94 Issue 20, p201107 

    Midwavelength infrared InAs–GaSb strained layer superlattice n+-n--p avalanche photodiodes, specifically designed to have hole dominated avalanching, with a zero percent cutoff wavelength of ∼6.3 μm are fabricated and characterized. Maximum multiplication gain of 105 is measured...

  • Quenching of impact ionization in heavy-ion induced electron-hole pair plasma tracks in wide bandwidth avalanche photodetectors. Laird, Jamie Stuart; Onoda, Shinobu; Hirao, Toshio; Edmonds, Larry // Journal of Applied Physics;Apr2010, Vol. 107 Issue 8, p084501 

    Optoelectronics such as Si avalanche photodiodes (APDs) used in space are subjected to background cosmic radiation including highly energetic heavy ions. As these swift ions pass through a device, they lose energy by promoting free electron-hole pairs. The resultant ionization track is an...

  • Stand-alone impact-ionization multiplier boosts photodiode signal.  // Laser Focus World;Dec2005, Vol. 41 Issue 12, p9 

    The article reports that researchers at Brigham Young University, Provo, Utah have fabricated stand alone impact-ionization multipliers that need to be electrically connected to an external photodiode of any type. A high localized electrical field in a depletion region is developed in the...

  • Characterization of midwave infrared InSb avalanche photodiode. Abautret, J.; Perez, J. P.; Evirgen, A.; Rothman, J.; Cordat, A.; Christol, P. // Journal of Applied Physics;6/28/2015, Vol. 117 Issue 24, p244502-1 

    This paper focuses on the InSb material potential for the elaboration of Avalanche Photodiodes (APD) for high performance infrared imaging applications, both in passive or active mode. The first InSb electron-APD structure was grown by molecular beam epitaxy, processed and electrically...

  • Experimental Performance and Monte Carlo Modeling of Long Wavelength Infrared Mercury Cadmium Telluride Avalanche Photodiodes. Derelle, S.; Bernhardt, S.; Haidar, R.; Deschamps, J.; Primot, J.; Rothman, J.; Rommeluere, S.; Guérineau, N. // Journal of Electronic Materials;Aug2009, Vol. 38 Issue 8, p1628 

    We evaluated the performance of long-wavelength infrared (LWIR, λc = 9.0 μm at 80 K) mercury cadmium telluride electron-injected avalanche photodiodes (e-APDs) in terms of gain, excess noise factor, and dark current, and also spectral and spatial response at zero bias. We found an...

  • Numerical simulation of impact ionization in Ge/AlxGa1-xAs avalanche photodiode. Chia, C. K. // Applied Physics Letters;8/16/2010, Vol. 97 Issue 7, p073501 

    Impact ionization in Ge/AlxGa1-xAs p-i-n heterostructures has been studied using the Monte Carlo technique. The thin (<300 nm) Ge/AlxGa1-xAs single heterojunction structure was found to exhibit large hole (β) to electron (α) ionization coefficient ratio, owing to a higher β in the Ge...

  • MnSi-Si〈Mn〉-MnSi and MnSi-Si〈Mn〉- M photodiodes. Shukurova, D.; Orekhov, A.; Sharipov, B.; Klechkovskaya, V.; Kamilov, T. // Technical Physics;Oct2011, Vol. 56 Issue 10, p1423 

    The current-voltage characteristics of MnSi-Si〈Mn〉-MnSi and MnSi-Si〈Mn〉- M photodiodes are studied experimentally. The current passage mechanism under illumination with hν ≥ E is considered. The role of a contact to MnSi in the provision of high...

  • Threshold Electron Impact Ionization of Molecules. Zavilopulo, A. N.; Snegursky, A. V. // Technical Physics Letters;Nov2002, Vol. 28 Issue 11, p913 

    Methods and results of an experimental investigation of the products of single ionization of molecules by electron impact in a near-threshold energy region are presented. The experiments were performed in a crossed beam geometry with ion separation and detection by a quadrupole mass...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics