Hydrogen interactions with delocalized spin centers in buried SiO[sub 2] thin films

Warren, W.L.; Schwank, J.R.; Shaneyfelt, M.R.; Fleetwood, D.M.; Winokur, P.S.
April 1993
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1661
Academic Journal
Examines the nature of defects in irradiated bonded and etchback silicon-on-insulator buried silica thin films. Use of electron paramagnetic resonance method; Categorization of the defects; Role of irradiation in positive charge generation in the dielectric.


Related Articles

  • Reduced threshold ultraviolet laser ablation of glass substrates with surface particle coverage: A mechanism for systematic surface laser damage. Kane, D. M.; Halfpenny, D. R. // Journal of Applied Physics;5/1/2000, Vol. 87 Issue 9, p4548 

    A recent study of ultraviolet laser cleaning of silica glass surfaces contaminated with medium density alumina particles has shown a systematic type of laser-induced surface damage. This is characterized as a pit which increases in diameter and depth with increasing irradiating fluence. The...

  • ‘‘Coreless defects’’ and the continuity of epitaxial NiSi2/Si(100) thin films. Batstone, J. L.; Gibson, J. M.; Tung, R. T.; Levi, A. F. J. // Applied Physics Letters;3/7/1988, Vol. 52 Issue 10, p828 

    Epitaxial thin films of NiSi2 on Si(100) have been grown by room-temperature deposition of Ni followed by a high-temperature reaction. Initial stages of epitaxy revealed by transmission electron microscopy show nucleation of crystallographically equivalent islands related by a translation vector...

  • Observation of a delocalized E' center in buried SiO[sub 2]. Vanheusden, K.; Stesmans, A. // Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2405 

    Examines the oxygen-vacancy defects generated at the surface of buried silica layers of the separation by oxygen structure implantation. Use of K-band electron spin resonance; Identification of a delocalized variant of the defect center; Correlation between the defects and substrate bias...

  • The influence of surface defects on the pinhole formation in silicide thin film. Belousov, I. V.; Grib, A. N.; Kuznetsov, G. V. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2006, Vol. 9 Issue 3, p29 

    The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences of the CoSi layer thickness were calculated for various values of the...

  • Defect Formation in PbTe under the Action of a Laser Shock Wave. Yakovyna, V. S.; Zayachuk, D. M.; Berchenko, N. N. // Semiconductors;Nov2003, Vol. 37 Issue 11, p1275 

    Mechanisms of the defect formation in PbTe thin films on BaF[sub 2] substrates under shock-wave action are studied, and the kinetics of the annealing of the resulting nonequilibrium crystal defects at room temperature is analyzed. The respective roles of the first- and second-order annealing...

  • Strong surface disorder and loss of N produced by ion bombardment of GaN. Kucheyev, S. O.; Kucheyev, S.O.; Williams, J. S.; Williams, J.S.; Jagadish, C.; Li, G.; Pearton, S. J.; Pearton, S.J. // Applied Physics Letters;6/26/2000, Vol. 76 Issue 26 

    The damage buildup in wurtzite GaN films under light ([sup 12]C) and heavy ([sup 197]Au) ion bombardment at temperatures from -196 to 550 °C is studied by Rutherford backscattering/channeling spectrometry. A strong surface peak of lattice disorder in addition to the expected damage peak in...

  • Effects of H+ Ion Implantation and Annealing on the Properties of CuIn0.75Ga0.25Se2 Thin Films. Ahmed, E.; Pilkington, R. D.; Hill, A. E.; Amar, M.; Ahmed, W.; Taylor, H.; Jackson, M. J. // Journal of Materials Engineering & Performance;Feb2007, Vol. 16 Issue 1, p119 

    In this paper the effects of post-deposition annealing followed by hydrogen ion-implantation on the properties of CuIn0.75Ga0.25Se2 thin films have been investigated. The samples were grown by flash evaporation onto glass substrates heated at temperature between room temperature and 200 °C....

  • Effects of surface defects on the orientation of NiSi2 formed on Si (111) substrates. Akinci, Gulden; Ohno, Timothy; Williams, Ellen D. // Applied Physics Letters;3/23/1987, Vol. 50 Issue 12, p754 

    The effects of surface reconstruction, surface steps, and deposition temperature on the growth of NiSi2 on Si(111) have been investigated using low-energy electron diffraction and Auger electron spectroscopy. Surface reconstruction was changed by diffusion of Ni into the substrate, forming a...

  • Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron-beam-induced current. Lau, W. S.; Chan, D. S. H.; Phang, J. C. H.; Chow, K. W.; Pey, K. S.; Lim, Y. P.; Sane, V.; Cronquist, B. // Journal of Applied Physics;1/15/1995, Vol. 77 Issue 2, p739 

    Presents a study which performed a quantitative imaging of local defects in very thin silicon oxide films at low bias voltage by true oxide electron beam-induced current. Experimental methods; Analysis of the low-voltage contrast mechanisms; Results and discussion.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics