TITLE

CuInSe[sub 2] homojunction diode fabricated by phosphorus doping

AUTHOR(S)
Kohiki, Shigemi; Nishitani, Mikihiko; Negami, Takayuki; Wada, Takahiro
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1656
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Fabricates a CuInSe[sub 2] homojunction diode by phosphorus doping into n-type copper-indium-selenide thin films. Preparation of the junction by phosphorus implantation; Deposition of the film by molecular beam epitaxy method; Change of p-type from n-type conduction; Substitution of selenium by group V elements.
ACCESSION #
4323056

 

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