TITLE

Perfectly selective Si epitaxial growth due to synchrotron radiation irradiation during disilane

AUTHOR(S)
Utsumi, Yuichi; Akazawa, Housei; Nagase, Masao; Uriso, Tsuneo; Kawashima, Izumi
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1647
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the selectivity in Si epitaxial growth (SEG) by synchrotron radiation (SR) irradiation during disilane molecular beam epitaxy. Non-occurrence of silicon nucleation on SiO[sub 2]; Comparison of SR-SEG with conventional SEG; Characterization of SEG.
ACCESSION #
4323053

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics