TITLE

Strain-compensated InGaAs/GaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda...0.98 mum) grown

AUTHOR(S)
Zhang, G.; Ovtchinnikov, A.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1644
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Describes the strain-compensated separate-confinement-heterostructure quantum well (QW) laser. Growth of the laser by gas-source molecular beam epitaxy; Properties of the laser; Suitability of the strained-compensated laser for device application requiring large number of QW.
ACCESSION #
4323052

 

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