Strain-compensated InGaAs/GaAs/GaAsP/GaInAsP/GaInP quantum well lasers (lambda...0.98 mum) grown

Zhang, G.; Ovtchinnikov, A.
April 1993
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1644
Academic Journal
Describes the strain-compensated separate-confinement-heterostructure quantum well (QW) laser. Growth of the laser by gas-source molecular beam epitaxy; Properties of the laser; Suitability of the strained-compensated laser for device application requiring large number of QW.


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