Time-dependent Hall effect analysis method used for investigation of the DX center in AlGaAs:Si

Brunthaler, G.; Stoger, G.; Aumayr, A.; Kohler, K.
April 1993
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1635
Academic Journal
Examines the use of time dependent Hall effect analysis method for studying the DX center in AlGaAs:Si. Interpolation method for individual measured voltages; Explanation of errors by a linear error approximation; Correlation effects between DX centers.


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