TITLE

Cathodoluminescence study of dislocation-related luminescence from small-angle grain boundaries in multicrystalline silicon

AUTHOR(S)
Woong Lee; Jun Chen; Bin Chen; Jiho Chang; Sekiguchi, Takashi
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p112103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Dislocation-related luminescence from small-angle grain boundaries (SA-GBs) in multicrystalline Si was investigated by cathodoluminescence. D3 and D4 emissions were detected at SA-GBs with a misorientation angle of around 1°–1.5°, and D1 and D2 at SA-GBs with a misorientation angle of around 2°–2.5°. Electron beam-induced current investigations indicate that the former SA-GBs possess only shallow energy levels, while the latter possess both deep and shallow levels. The origins of D-line luminescence at SA-GBs are discussed in terms of dislocation structures.
ACCESSION #
43230442

 

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