Cathodoluminescence study of dislocation-related luminescence from small-angle grain boundaries in multicrystalline silicon

Woong Lee; Jun Chen; Bin Chen; Jiho Chang; Sekiguchi, Takashi
March 2009
Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p112103
Academic Journal
Dislocation-related luminescence from small-angle grain boundaries (SA-GBs) in multicrystalline Si was investigated by cathodoluminescence. D3 and D4 emissions were detected at SA-GBs with a misorientation angle of around 1°–1.5°, and D1 and D2 at SA-GBs with a misorientation angle of around 2°–2.5°. Electron beam-induced current investigations indicate that the former SA-GBs possess only shallow energy levels, while the latter possess both deep and shallow levels. The origins of D-line luminescence at SA-GBs are discussed in terms of dislocation structures.


Related Articles

  • Structure and luminescence properties of antimony(III) complex compounds. Sedakova, T. V.; Mirochnik, A. G.; Karasev, V. E. // Optics & Spectroscopy;Oct2008, Vol. 105 Issue 4, p517 

    The influence of the structure of the anion sublattice on the spectral luminescence properties is investigated using the example of antimony(III) complex compounds with outer-sphere organic cations. It is established that the factors favorable for the enhancement of the luminescence of...

  • Time resolved 3.10 eV luminescence in germanium-doped silica glass. Gallagher, Matt; Osterberg, Ulf // Applied Physics Letters;11/29/1993, Vol. 63 Issue 22, p2987 

    Presents time resolved measurements of luminescence in germaniun-doped silica. Origin of the three electronvolt band; Determination of photoluminescence decay; Delay between the appearance of maximum intensity and excitation in photoluminescence; Contribution of additional energy state.

  • Terahertz impurity luminescence under the interband photoexcitation of semiconductors. Andrianov, A. V.; Zakhar'in, A. O.; Ivanov, Yu. L.; Kipa, M. S. // JETP Letters;Mar2010, Vol. 91 Issue 2, p96 

    The observation of intense terahertz luminescence under the interband photoexcitation of n-GaAs and p-Ge semiconductors at low temperatures is reported. The terahertz photoluminescence is caused by radiative transitions, which accompany the capture of nonequilibrium carriers by impurity centers....

  • Low-temperature spatially resolved micro-photoluminescence mapping in CdZnTe single crystals. Yang, G.; Bolotnikov, A. E.; Cui, Y.; Camarda, G. S.; Hossain, A.; Kim, K. H.; Gul, R.; James, R. B. // Applied Physics Letters;6/27/2011, Vol. 98 Issue 26, p261901 

    We utilized a low-temperature spatially resolved micro-photoluminescence mapping technique to investigate the spatial variation of photoluminescence- and electronic-defect states in areas of CdZnTe (CZT) single crystals containing structural-imperfections. Photoluminescence mapping of the...

  • Optical bistability in Er-Yb codoped phosphate glass microspheres at room temperature. Ward, Jonathan M.; O’Shea, Danny G.; Shortt, Brian J.; Chormaic, Síle Nic // Journal of Applied Physics;7/15/2007, Vol. 102 Issue 2, p023104 

    We experimentally demonstrate optical bistability in Er3+-Yb3+ phosphate glass microspheres at 295 K. Bistability is associated with both Er3+ fluorescence and lasing behavior, and chromatic switching. The chromatic switching results from an intrinsic mechanism exploiting the thermal coupling of...

  • Optical properties of dislocations in wurtzite ZnO single crystals introduced at elevated temperatures. Ohno, Y.; Koizumi, H.; Taishi, T.; Yonenaga, I.; Fujii, K.; Goto, H.; Yao, T. // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p073515 

    Optical properties of wurtzite ZnO bulk single crystals in which an arbitrary number (typically 109–1010 cm-2) of fresh dislocations were introduced intentionally by the plastic deformation at elevated temperatures (923–1073 K) were examined. Deformed specimens showed excitonic...

  • Dynamics of bound soliton states in regularized dispersive equations. Bogdan, M. M.; Charkina, O. V. // Low Temperature Physics;Jul2008, Vol. 34 Issue 7, p564 

    The nonstationary dynamics of topological solitons (dislocations, domain walls, fluxons) and their bound states in one-dimensional systems with high dispersion are investigated. Dynamical features of a moving kink emitting radiation and breathers are studied analytically. Conditions of the...

  • The peripheral dose outside the applicator in electron beams of Oncor linear accelerator. Iktueren, Basak; Bilge, Hatice; Karacam, Songul; Atkovar, Gulyuz // Radiation Protection Dosimetry;Jun2012, Vol. 150 Issue 2, p192 

    In this study, the peripheral dose outside the applicator was measured using electron beams produced by an Oncor linear accelerator and compared with the data of the treatment planning system (TPS). The dose profiles have been measured, by using a water-equivalent slab phantom and a parallel...

  • Milestones in EBIT spectroscopy and why it almost did not work. Marrs, R. E. // Canadian Journal of Physics;Jan2008, Vol. 86 Issue 1, p11 

    The electron beam ion trap (EBIT) spectroscopy that now seems routine would not be possible without considerable good luck in several areas of EBIT technology. Among these are X-ray background, ion cooling, neutral gas density, and electron current density and energy control. A favorable outcome...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics