TITLE

Amphoteric behavior of germanium in In[sub 0.5]Ga[sub 0.5]P grown by liquid phase epitaxy

AUTHOR(S)
Jong Boong Lee; In Kim; Ho Ki Kwon; Byung-Doo Choe
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1620
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the amphoteric behavior of Ge in In[sub 0.5]Ga[sub 0.5]P grown by liquid phase epitaxy. Use of Hall effect, capacitance voltage, photoluminescence, and electroluminescence measurements; Activation energies of donor and acceptor; Observation of deep acceptor transition related to Ge complex.
ACCESSION #
4323044

 

Related Articles

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics