Tomographic study of atomic-scale redistribution of platinum during the silicidation of Ni0.95Pt0.05/Si(100) thin films

Adusumilli, Praneet; Lauhon, Lincoln J.; Seidman, David N.; Murray, Conal E.; Avayu, Ori; Rosenwaks, Yossi
March 2009
Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p113103
Academic Journal
Atom-probe tomography was utilized to study the distribution of Pt after silicidation of a solid-solution Ni0.95Pt0.05 thin film on Si(100). Direct evidence of Pt short-circuit diffusion via grain boundaries, Harrison’s type-B regime, is found after silicidation to form (Ni0.99Pt0.01)Si. This underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt. Platinum segregates at the (Ni0.99Pt0.01)Si/Si(100) interface, which may be responsible for the increased resistance of (Ni0.99Pt0.01)Si to agglomeration. The relative shift in work function between as-deposited and annealed states is greater for Ni(Pt)Si than for NiSi.


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