Stranski–Krastanow growth of [formula]-oriented GaN/AlN quantum dots

Lahourcade, L.; Valdueza-Felip, S.; Kehagias, T.; Dimitrakopulos, G. P.; Komninou, P.; Monroy, E.
March 2009
Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p111901
Academic Journal
Semipolar [formula] deposited on [formula] by plasma-assisted molecular-beam epitaxy can follow the Frank–Van der Merwe or the Stranski–Krastanow growth mode as a function of the Ga/N ratio. N-rich grown GaN relaxes elastically at a critical thickness but the resulting GaN islands present multiple crystallographic orientations. In contrast, after deposition of a few two-dimensional GaN monolayers under Ga-rich conditions, a growth interruption in vacuum induces [formula]-oriented islanding. Applying this latter procedure, we have synthesized GaN/AlN quantum dot superlattices with reduced internal electric field.


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