Spatially resolved doping concentration measurement in semiconductors via spin noise spectroscopy

Römer, M.; Hübner, J.; Oestreich, M.
March 2009
Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p112105
Academic Journal
We propose and demonstrate spin noise spectroscopy as an efficient, noncontact method to measure doping concentrations in semiconductors with high accuracy and high spatial resolution. In a proof of concept study, two different doping levels in a silicon-doped GaAs stack are depth resolved with a relative accuracy of up to 5% and a spatial accuracy better than 50 μm. The method promises three-dimensional doping measurements in direct semiconductors with submicrometer resolution even at extremely low doping concentrations.


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