TITLE

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

AUTHOR(S)
Dai, Q.; Schubert, M. F.; Kim, M. H.; Kim, J. K.; Schubert, E. F.; Koleske, D. D.; Crawford, M. H.; Lee, S. R.; Fischer, A. J.; Thaler, G.; Banas, M. A.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p111109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Room-temperature photoluminescence (PL) measurements are performed on GaInN/GaN multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different threading-dislocation densities. The selective optical excitation of quantum wells and the dependence of integrated PL intensity on excitation power allow us to determine the internal quantum efficiency (IQE) as a function of carrier concentration. The measured IQE of the sample with the lowest dislocation density (5.3×108 cm-2) is as high as 64%. The measured nonradiative coefficient A varies from 6×107 to 2×108 s-1 as the dislocation density increases from 5.3×108 to 5.7×109 cm-2, respectively.
ACCESSION #
43230419

 

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