Hydrogen diffusion in NaH as derived from isotope exchange experiments

Borgschulte, A.; Pendolino, F.; Gremaud, R.; Züttel, A.
March 2009
Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p111907
Academic Journal
We report on hydrogen-deuterium-exchange experiments on NaH probed by thermogravimetry. From the measurements a diffusion parameter of deuterium in NaH of D=1.1×10-17 m2/s at 523 K is derived. The activation energy of tracer diffusion of D in NaH is found to be 1.0 eV. The results are hints for a diffusion process mediated by neutral hydrogen vacancies.


Related Articles

  • Scanning Kerr Microscopy of the Spin Hall Effect in n-Doped GaAs with Various Doping Concentration. Matsuzaka, S.; Ohno, Y.; Ohno, H. // Journal of Superconductivity & Novel Magnetism;Jan2010, Vol. 23 Issue 1, p37 

    We investigated the doping concentration ( ND) dependence of the extrinsic spin Hall effect (SHE) in n-doped GaAs with ND raging from 3×1016 cm−3 to 5×1017 cm−3. By using scanning Kerr microscopy (SKM) measurements, we observed the Kerr rotation signal due to the spin...

  • Electrical Properties OF GaAs Doped with Iron. Khludkov, S.; Prudaev, I.; Novikov, V.; Budnitskii, D.; Lopatetskaya, K. // Russian Physics Journal;Apr2014, Vol. 56 Issue 12, p1435 

    Electrical characteristics of GaAs doped with Fe in the diffusion process are studied. It is shown that as in the case of the single-crystal GaAs doped with Fe during growth, in GaAs doped in the diffusion process, the impurity Fe creates an acceptor level 0.53 eV above the top of the GaAs...

  • Effect of cation distribution on self-diffusion of molecular hydrogen in Na3Al3Si3O12 sodalite: A molecular dynamics study. van den Berg, A. W. C.; Bromley, S. T.; Flikkema, E.; Jansen, J. C. // Journal of Chemical Physics;11/22/2004, Vol. 121 Issue 20, p10209 

    The diffusion of hydrogen in sodium aluminum sodalite (NaAlSi-SOD) is modeled using classical molecular dynamics, allowing for full flexibility of the host framework, in the temperature range 800–1200 K. From these simulations, the self-diffusion coefficient is determined as a function of...

  • Silicon doping from phosphorus spin-on dopant sources in proximity rapid thermal diffusion. Zagozdzon-Wosik, W.; Grabiec, P.B.; Lux, G. // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p337 

    Rapid thermal diffusion (RTD) of phosphorus has been investigated using a spin-on dopant (SOD) deposited on a silicon wafer and placed as a dopant source in proximity to a processed Si wafer. In such a process, the efficiency of doping is affected by the amount of P supplied from the SOD to the...

  • Sensing of atomized liquids through field effects of polarization and ionization induced by nanostructures. Zhongyu Hou; Bingchu Cai; Hai Liu // Applied Physics Letters;6/1/2009, Vol. 94 Issue 22, p223503 

    The mechanism and instrumentation of an atomized liquid sensing system is presented, characterizing the dynamic polarization and ionization processes of liquid droplets in an electric field converged by one dimensional nanostructures. The microarchitecture implementing the mechanism is realized...

  • Ion dynamics and mixed mobile ion effect in fluoride glasses. Ghosh, S.; Ghosh, A. // Journal of Applied Physics;6/15/2005, Vol. 97 Issue 12, p123525 

    We report the ionic relaxation and mixed mobile ion effect in 50ZrF4-10BaF2-10YF3-(30-x)LiF-xNaF fluoride glass series, where fluorine anions participate in the diffusion process in addition to alkali cations, unlike mixed alkali oxide glasses and crystals. By analyzing the ion dynamics in the...

  • Specific features of the formation of terrace-step nanostructures on the (0001) surface of sapphire crystals. Butashin, A.; Vlasov, V.; Kanevskii, V.; Muslimov, A.; Fedorov, V. // Crystallography Reports;Nov2012, Vol. 57 Issue 6, p824 

    The terrace-step structures on atomically smooth vicinal surfaces of sapphire crystals subjected to thermal annealing after mechanical and chemical treatments have been investigated by atomic-force microscopy. The influence of the vicinal angles and conditions of thermal treatment (including...

  • Modeling of feature profile evolution for ion etching. Li, Kun-Dar // Journal of Applied Physics;Jan2013, Vol. 113 Issue 1, p014305 

    A kinetic model is presented to investigate the profile evolution during ion etching. The effects of ion sputtering, redeposition, and diffusion processes are all taken into consideration in the formation mechanism of surface profile. The dominant factors accounting for the surface smoothening...

  • Quantum state of an injected TROPO above threshold: purity, Glauber function and photon number distribution. Golubeva, T.; Golubev, Yu.; Fabre, C.; Treps, N. // European Physical Journal D -- Atoms, Molecules, Clusters & Opti;Apr2008, Vol. 47 Issue 1, p179 

    In this paper, we investigate several properties of the full signal-idler-pump mode quantum state generated by a triply resonant non-degenerate Optical Parametric Oscillator operating above threshold, with an injected wave on the signal and idler modes in order to lock the phase diffusion...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics