Pulse width controlled resistivity switching at room temperature in Bi0.8Sr0.2MnO3

Rebello, A.; Mahendiran, R.
March 2009
Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p112107
Academic Journal
We report pulsed as well as direct current/voltage induced electroresistance in Bi0.8Sr0.2MnO3 at room temperature. It is shown that bilevel and multilevel resistivity switching can be induced by a sequence of pulses of varying pulse width at a fixed voltage amplitude. Resistivity increases abruptly (≈55% at 300 K) upon reducing pulse width from 100 to 25 ms for a fixed electric field (E=2 V/cm2) of 200 ms pulse period. The resistivity switching is accompanied by a periodic change in temperature, which alone cannot explain the magnitude of the resistivity change.


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