Solubility of hydrogen in silicon at 1300 degrees C

McQuaid, S.A.; Binns, M.J.; Newman, R.C.; Lightowlers, E.C.; Clegg, J.B.
April 1993
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1612
Academic Journal
Examines the solubility of hydrogen in silicon at 1300 degrees Celsius. Incorporation of hydrogen in boron doped Czochralski silicon; Termination of the anneal by rapid quench; Effects of isotopic mass on estimated solubility.


Related Articles

  • Hydrogen dissolution in and release from nonmetals. II. Crystalline silicon. Abrefah, J.; Olander, D. R.; Balooch, M. // Journal of Applied Physics;4/1/1990, Vol. 67 Issue 7, p3302 

    Presents a study in which the solubility of hydrogen in crystalline silicon has been measured using the method of high-temperature, high-pressure infusion followed by high-temperature vacuum outgassing with mass-spectrometric detection. Information on the pressure dependence of the solubility;...

  • Structural relaxation and hydrogen solubility in an amorphous Pd80Si20 alloy. Lee, Sung-Man; Lee, Jai-Young // Journal of Applied Physics;5/1/1988, Vol. 63 Issue 9, p4758 

    Presents information on a study which investigated the effect of structural relaxation on hydrogen solubility in amorphous pyridinium[sub80]silicon[sub20], by calorimetric and thermal desorption techniques. Application of the differential scanning calorimetry technique; Equation describing the...

  • Reduction of iron solubility in silicon with oxygen precipitates. Colas, Etienne G.; Weber, Eicke R. // Applied Physics Letters;5/19/1986, Vol. 48 Issue 20, p1371 

    The solubilities of iron in samples treated with various oxygen precipitation treatments were compared. The solubility of iron was reduced by almost two orders of magnitude in samples containing low-temperature oxygen precipitates. It is suggested that a new phase forms, probably an oxygen-metal...

  • Al(Ge) metallization: The effect of Ge on the solubility of Si in Al. Dale, C. J.; Pan, C. K.; Flinner, J. L.; Chu, W. K.; Finstad, T. G. // Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4459 

    Presents a study which examined the effect of germanium on the solubility of silicon in aluminum. Method of the study; Results and discusion; Conclusion.

  • Solubility of interstitial oxygen in silicon. Wijaranakula, W. // Applied Physics Letters;9/2/1991, Vol. 59 Issue 10, p1185 

    Determines the solubility of interstitial oxygen in silicon. Presentation of oxygen precipitation rate; Description of the solubility by the Arrhenius equation; Observation of dissolved oxygen concentration in Czochralski-grown silicon.

  • Influence of the Screening Effect on Passivation of p-Type Silicon by Hydrogen. Aleksandrov, O. V. // Semiconductors;Jan2002, Vol. 36 Issue 1, p21 

    Passivation of p-Si by hydrogen through its diffusion was simulated by solving diffusion-kinetic equations with allowance made for hydrogen-acceptor-pair formation, internal electric field, and the screening effect. Screening of hydrogen and acceptor ions by free carriers leads to a decrease in...

  • Hydrogen incorporation in undoped microcrystalline silicon. Johnson, N. M.; Ready, S. E.; Boyce, J. B.; Doland, C. D.; Wolff, S. H.; Walker, J. // Applied Physics Letters;10/24/1988, Vol. 53 Issue 17, p1626 

    Hydrogen in undoped, unalloyed microcrystalline silicon (μc-Si:H) has been investigated with secondary-ion mass spectrometry (SIMS), Raman spectroscopy, infrared absorption spectroscopy, and nuclear magnetic resonance (NMR). The samples were grown by plasma-enhanced chemical vapor deposition...

  • Hydrogen elimination and phase transitions in pulsed-gas plasma deposition of amorphous and... Srinivasan, Easwar; Parsons, Gregory N. // Journal of Applied Physics;3/15/1997, Vol. 81 Issue 6, p2847 

    Studies the mechanisms of hydrogen elimination during microcrystalline and polycrystalline silicon deposition. Results of infrared and Raman analysis; Mass spectroscopy analysis of abstraction and etching; Infrared spectra of films deposited at 10 W with varying extent of atomic deuterium exposure.

  • An effective-mass model of hydrogenated amorphous silicon: A tail state analysis. O’Leary, Stephen K.; Zukotynski, Stefan; Perz, John M. // Journal of Applied Physics;9/15/1992, Vol. 72 Issue 6, p2272 

    Presents a study that proposed an effective-mass model of hydrogenated amorphous silicon. Impact of hydrogen on the electronic structure of the tail states; Calculations of tail state density-of-states performed in high hydrogen concentration limit; Background on the fundamental properties of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics