Existence of extinction temperature in WSi[sub x] film growth from WF[sub 6] and SiH[sub 4]: An

Saito, T.; Shimogaki, Y.; Egashira, Y.; Komiyama, H.; Yuyama, Y.; Sugawara, K.; Nagata, S.; Takahiro, K.; Yamaguchi, S.
April 1993
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1606
Academic Journal
Reports the existence of an extinction temperature in WSi[sub x] film growth from WF[sub 6] and SiH[sub 4]. Indication of domination by radical chain reactions in gas phase; Decrease of deposition rate at an extinction temperature; Use of low pressure chemical vapor deposition.


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