TITLE

Existence of extinction temperature in WSi[sub x] film growth from WF[sub 6] and SiH[sub 4]: An

AUTHOR(S)
Saito, T.; Shimogaki, Y.; Egashira, Y.; Komiyama, H.; Yuyama, Y.; Sugawara, K.; Nagata, S.; Takahiro, K.; Yamaguchi, S.
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1606
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the existence of an extinction temperature in WSi[sub x] film growth from WF[sub 6] and SiH[sub 4]. Indication of domination by radical chain reactions in gas phase; Decrease of deposition rate at an extinction temperature; Use of low pressure chemical vapor deposition.
ACCESSION #
4323039

 

Related Articles

  • Large-scale well aligned carbon nitride nanotube films: Low temperature growth and electron field emission. Zhong, Dingyong; Liu, Shuang; Zhang, Guangyu; Wang, E. G. // Journal of Applied Physics;6/1/2001, Vol. 89 Issue 11, p5939 

    Large-scale well aligned carbon nitride nanotube films (6 cm in diameter), which are easily processed and show potential for nanomanipulation, have been synthesized by microwave plasma enhanced chemical vapor deposition at a relatively low temperature of 550 °C. The characterization, using...

  • Ultraviolet spectroscopy of gaseous species in a hot filament diamond deposition system when C2H2 and H2 are the input gases. Toyoda, H.; Childs, M. A.; Menningen, K. L.; Anderson, L. W.; Lawler, J. E. // Journal of Applied Physics;3/15/1994, Vol. 75 Issue 6, p3142 

    Discusses a study which measured the methyl radical density, acetylene mole fraction, filament properties and diamond growth rate and film quality in a hot filament chemical vapor deposition (CVD) system when carbon[sub2] hydrogen[sub2] and hydrogen[sub2] are used as input gases. Schematic...

  • Strong flux pinning centers in Y-Ba-Cu-O films prepared by chemical vapor deposition. Watanabe, K.; Matsushita, T.; Kobayashi, N.; Kawabe, H.; Aoyagi, E.; Hiraga, K.; Yamane, H.; Kurosawa, H.; Hirai, T.; Muto, Y. // Applied Physics Letters;4/9/1990, Vol. 56 Issue 15, p1490 

    The Y-Ba-Cu-O film prepared by chemical vapor deposition showed Tc=91.5 K and Bc2 (77.3 K)=60 T defined by zero resistance. The Jc values measured at 77.3 K were 7.8×105 A/cm2 at B=0 and 1.0×105 A/cm2 at 16 T, magnetic fields perpendicular to the c axis. Small disk-shaped precipitates...

  • Organometallic chemical vapor deposition of tungsten metal, and suppression of carbon.... Niemer, Burkhard; Zinn, Alfred A. // Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1793 

    Examines the production of tungsten films through decomposition of bis-cyclopentadienyltungstendihydride. Use of organometallic chemical vapor deposition of to reduce carbon and oxygen content of the films; Presence of x-ray diffraction patterns of the metal; Details on platinum concentration...

  • Selective low pressure chemical vapor deposition of copper: Effect of added water vapor in.... Lecohier, B.; Calpini, B. // Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3114 

    Examines the low pressure chemical vapor deposition of copper from bis-hexafluoroacetylacetonate on oxidized silicon substrates. Growth rates of the copper films; Chemical purity and electrical conductivity of the copper deposits; Influence of the substrate adsorption-desorption properties on...

  • Enhanced growth of device-quality copper by hydrogen plasma-assisted chemical vapor deposition. Eisenbraun, Eric T.; Bo Zheng // Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3126 

    Develops a hydrogen plasma-assisted chemical vapor deposition process for the growth of device-quality copper films on large-area substrates. Presence of the high concentration of reactive hydrogen species in the plasma; Enhancement of the clean reduction of copper B-diketonate precursor;...

  • In situ, real-time observation of Al chemical-vapor deposition on SiO2 in an environmental transmission electron microscope. Drucker, Jeff; Sharma, Renu; Weiss, Karl; Kouvetakis, John // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2846 

    Presents a study which demonstrated a technique for in situ observation of chemical-vapor deposition (CVD). Characteristics of aluminum CVD films; Schematic representation of the pumped environmental cell; Description of the film microstructure near the perforation in the silicon disk;...

  • Thin films of CoAs from low-temperature metalorganic chemical vapor deposition of a novel.... Klingan, Franz-Robert; Miehr, Alexander // Applied Physics Letters;8/7/1995, Vol. 67 Issue 6, p822 

    Examines the metalorganic chemical vapor deposition of cobalt arsenide (CoAs) thin films. Use of x-ray and Auger spectroscopy to confirm the composition of CoAs; Decomposition of 1,3-bis(tert-butyl)-2-tetracarbonyl-cobalt(-1)-1,2,3-diazarsolidine; Details on the crystallinity and electrical...

  • The role of kinetics in the nucleation and void formation in copper films produced by chemical vapor deposition. Kroger, R. // Journal of Applied Physics;8/15/2000, Vol. 88 Issue 4, p1867 

    Examines the role of kinetics in the nucleation and void formation in copper (Cu) films produced by chemical vapor deposition. Use of electron microscopy and atomic force microscopy; Comparison of nucleation densities between titanium-nitride and tantalum; Development of a model for the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics