TITLE

Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves

AUTHOR(S)
Steigerwald, A.; Xu, Y.; Qi, J.; Gregory, J.; Liu, X.; Furdyna, J. K.; Varga, K.; Hmelo, A. B.; Lüpke, G.; Feldman, L. C.; Tolk, N.
PUB. DATE
March 2009
SOURCE
Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p111910
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Coherent acoustic phonon interferometry is used to quantitatively measure depth-dependent point defect concentrations in semiconductor systems with a depth range of the order of tens of microns. Using time-resolved pump-probe techniques, the optical response of ion-beam irradiated GaAs crystals is analyzed as a function of defect concentration ranging over four orders of magnitude. Varying the ion dose quantitatively relates changes in the optical response to local defect concentrations. Thermal annealing is shown to reduce the effect on the optical response, indicating recovery of the crystal lattice through self-interstitial-vacancy recombination.
ACCESSION #
43230387

 

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