Observation of solid phase epitaxy processes of Ar ion bombarded Si(001) surfaces by scanning

Uesugi, Katsuhiro; Yao, Takafumi; Sato, Tomoshige; Sueyoshi, Takashi; Iwatsuki, Masashi
April 1993
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1600
Academic Journal
Reports the observation of solid phase epitaxy processes of Ar ion bombarded Si(001) surfaces by scanning tunneling microscopy (STM). Proposal of defect models for (2x2) and c(4x4) structures; Evolution of surface morphology in amorphous to crystalline processes; Thermal annealing with STM.


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