TITLE

Observation of solid phase epitaxy processes of Ar ion bombarded Si(001) surfaces by scanning

AUTHOR(S)
Uesugi, Katsuhiro; Yao, Takafumi; Sato, Tomoshige; Sueyoshi, Takashi; Iwatsuki, Masashi
PUB. DATE
April 1993
SOURCE
Applied Physics Letters;4/5/1993, Vol. 62 Issue 14, p1600
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Reports the observation of solid phase epitaxy processes of Ar ion bombarded Si(001) surfaces by scanning tunneling microscopy (STM). Proposal of defect models for (2x2) and c(4x4) structures; Evolution of surface morphology in amorphous to crystalline processes; Thermal annealing with STM.
ACCESSION #
4323037

 

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