Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si

Zhang, T. C.; Guo, Y.; Mei, Z. X.; Gu, C. Z.; Du, X. L.
March 2009
Applied Physics Letters;3/16/2009, Vol. 94 Issue 11, p113508
Academic Journal
Exploiting a double heterojunction of n-ZnO/insulator-MgO/p-Si grown by molecular beam epitaxy, a visible-blind ultraviolet (UV) photodetector has been fabricated. The photodetector shows a rectification ratio of ∼104 at ±2 V and a dark current of 0.5 nA at a reverse bias of -2 V.The photoresponse spectrum indicates a visible-blind UV detectivity of our devices with a sharp cut off at the wavelength of 378 nm and a high UV/visible rejection ratio. The key role of the middle insulating MgO layer, as a barrier layer for minority carrier transport, has been demonstrated.


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