Strong field hole transport in 6H-SiC

Sankin, V. I.; Shkrebiy, P. P.; Yakimova, R.
February 2009
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p082101
Academic Journal
In materials with a small degree of ionicity ranging 10%–15%, such as in SiC, carrier scattering on polar optical potential is plausible. J-F characteristics of hot hole transport in 6H-SiC with Na-Nd∼5×1017 cm-3 are studied at electrical fields of 1–150 kV/cm and temperatures from 300 to 600 K. In this work possible mechanisms contributing to the J-F characteristics are considered: scattering on ionized impurities, impurity breakdown due to Al acceptors, hole transport in the light valence subband formed due to splitting by crystal field, and dielectric breakdown related to polar optical scattering.


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