TITLE

Injectorless quantum cascade laser with low voltage defect and improved thermal performance grown by metal-organic chemical-vapor deposition

AUTHOR(S)
Dey, Dibyendu; Wei Wu; Memis, Omer Gokalp; Mohseni, Hooman
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p081109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate a strain-compensated injectorless quantum cascade laser (I-QCL), grown by metal-organic chemical-vapor deposition, with a very low voltage defect operating up to room temperature. We experimentally study the effect of voltage defect on thermal performance by comparing the rise in core temperature over a 300 ns pulse width of I-QCL and conventional QCL, working in pulsed mode using time-resolved step scan. I-QCL shows approximately eight times lower rate of rise in core temperature compared to conventional QCL.
ACCESSION #
43230338

 

Related Articles

  • Change of the trap energy levels of the atomic layer deposited HfLaOx films with different La concentration. Chee-Hong An; Myung Soo Lee; Ju-Yun Choi; Hyoungsub Kim // Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p262901 

    Ultrathin HfO2 and HfLaOx films with La/(Hf+La) ratios of 42%, 57%, and 64% were synthesized with an atomic layer deposition process. By measuring the leakage current at different temperatures, the conduction mechanism of HfO2 and HfLaOx films was shown to follow the Poole–Frenkel...

  • Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser. Ludewig, P.; Knaub, N.; Hossain, N.; Reinhard, S.; Nattermann, L.; Marko, I. P.; Jin, S. R.; Hild, K.; Chatterjee, S.; Stolz, W.; Sweeney, S. J.; Volz, K. // Applied Physics Letters;6/17/2013, Vol. 102 Issue 24, p242115 

    The Ga(AsBi) material system opens opportunities in the field of high efficiency infrared laser diodes. We report on the growth, structural investigations, and lasing properties of dilute bismide Ga(AsBi)/(AlGa)As single quantum well lasers with 2.2% Bi grown by metal organic vapor phase epitaxy...

  • Strained InAs/InP quantum well heterostructure lasers grown by low-pressure metalorganic.... Xing, Q.J.; Brebner, J.L. // Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p567 

    Investigates strained quantum well heterostructure lasers grown by low-pressure metalorganic chemical vapor deposition. Measurement of the lasing characteristics using pulsed excitation; Determination of the characteristic temperature T[sub o] of the strained-layer laser devices;...

  • Relaxation and storage of multiparticle entangled states of atoms in a collective thermostat. Basharov, A. M.; Gorbachev, V. N.; Rodichkina, A. A. // Optics & Spectroscopy;Jul2007, Vol. 103 Issue 1, p52 

    Multiparticle entangled states that are the generalization of the W class states and can be reduced to Dicke states are considered. The master equation describing the collective decay of atoms in a cavity is derived for the Tavis-Cummings model in the dispersive limit. The entangled states of...

  • Measurement of gain and losses of a midinfrared quantum cascade laser by wavelength chirping spectroscopy. Benveniste, E.; Laurent, S.; Vasanelli, A.; Manquest, C.; Sirtori, C.; Teulon, F.; Carras, M.; Marcadet, X. // Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p081110 

    We present an optimized technique for the measurement of gain and losses of semiconductor lasers. We optically inject the beam of a distributed feedback laser (DFB) inside the cavity of the lasers under study. The DFB laser operates in a pulsed mode and shifts its emission wavelength as a...

  • Structure of (Ba0.7Sr0.3)TiO3 films prepared by chemical solution deposition during crystallization on a sublayer. Zhigalina, O.; Vorotilov, K.; Sigov, A.; Kumskov, A. // Physics of the Solid State;Jun2006, Vol. 48 Issue 6, p1205 

    Barium strontium titanate (BST) films on Si-SiO2-Ti-Pt substrates are prepared by chemical solution deposition upon crystallization on a sublayer. The structure of the BST films is investigated using transmission electron microscopy, high-resolution electron microscopy, and x-ray diffraction...

  • Morphology evolution of hierarchical ZnO nanostructures modulated by supersaturation and growth temperature. Yan, Youguo; Zhou, Lixia; Yu, Lianqing; Zhang, Ye // Applied Physics A: Materials Science & Processing;Nov2008, Vol. 93 Issue 2, p457 

    Three kinds of ZnO hierarchical structures, nanocombs with tube- and needle-shaped teeth and hierarchical nanorod arrays, were successfully synthesized through the chemical vapor deposition method. Combining the experimental parameters, the microcosmic growing conditions (growth temperature and...

  • Remote plasma treatment of Si surfaces: Enhanced nucleation in low-temperature chemical vapor deposition. Kumar, Navneet; Yanguas-Gil, Angel; Daly, Scott R.; Girolami, Gregory S.; Abelson, John R. // Applied Physics Letters;10/5/2009, Vol. 95 Issue 14, p144107 

    The nucleation density on Si(100):H is increased by two orders of magnitude after exposing the surface to a remote argon plasma. We study HfB2 growth from Hf(BH4)4 and MgO growth from Mg(DMDBA)2 plus H2O. In the latter case, pretreatment allows the growth of MgO films with an rms roughness below...

  • Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy. Banal, Ryan G.; Funato, Mitsuru; Kawakami, Yoichi // Applied Physics Letters;6/16/2008, Vol. 92 Issue 24, p241905 

    AlN layers were grown directly on sapphire (0001) substrates using three different growth sequences based on metal-organic vapor phase epitaxy with an emphasis on initial nucleation processes. These three methods were simultaneous, alternating supply of aluminum and nitrogen sources, and a...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics