Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta2O5 gate dielectric with Au source/drain electrodes

Takebayashi, Satoko; Abe, Shigeomi; Saiki, Koichiro; Ueno, Keiji
February 2009
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p083305
Academic Journal
Pentacene field-effect transistors (FETs) were fabricated on a poly(vinyl alcohol) (PVA)-coated Ta2O5 gate dielectric using Au source/drain electrodes. Their device characteristics were examined before and after annealing the FETs in a vacuum. Before annealing, the pentacene FET showed an ambipolar operation with hole mobility of 0.1 cm2 V-1 s-1 and electron mobility of 0.005 cm2 V-1 s-1. After annealing at 50 °C, however, the p-type operation characteristics almost diminished and an enhanced n-type operation was observed. Na+ ions in the PVA are supposed to change the character of the injection barrier at the Au/pentacene junction and enable the n-type operation.


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