TITLE

Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors

AUTHOR(S)
Jingfeng Yang; Jiaqi Yang; Baoguang Yan; Gang Du; Xiaoyan Liu; Ruqi Han; Jinfeng Kang; Liao, C. C.; Gan, Z. H.; Liao, M.; Wang, J. P.; Wong, W.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p082103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Dependence of negative bias temperature instability (NBTI) on the frequency of the pulsed stress applied on p-channel transistors with plasma nitrided SiON gate dielectrics is studied. The threshold voltage shift (ΔVth) decrease is observed with increase in frequency. The fractional relaxation is found to be more remarkable after a pulse stress with higher frequency. A phenomenological model based on the dispersive transport of hydrogen in the gate dielectrics is proposed to explain the pulse based NBTI characteristics. The frequency dependence of NBTI is attributed to the existence of deep level hydrogen traps in the gate dielectrics. The model predicts reduced frequency dependence in the ultrahigh frequency range. The results and discussion also confirm the overall correctness of the dispersive transport framework in interpreting the NBTI mechanisms.
ACCESSION #
43230329

 

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