Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors

Jingfeng Yang; Jiaqi Yang; Baoguang Yan; Gang Du; Xiaoyan Liu; Ruqi Han; Jinfeng Kang; Liao, C. C.; Gan, Z. H.; Liao, M.; Wang, J. P.; Wong, W.
February 2009
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p082103
Academic Journal
Dependence of negative bias temperature instability (NBTI) on the frequency of the pulsed stress applied on p-channel transistors with plasma nitrided SiON gate dielectrics is studied. The threshold voltage shift (ΔVth) decrease is observed with increase in frequency. The fractional relaxation is found to be more remarkable after a pulse stress with higher frequency. A phenomenological model based on the dispersive transport of hydrogen in the gate dielectrics is proposed to explain the pulse based NBTI characteristics. The frequency dependence of NBTI is attributed to the existence of deep level hydrogen traps in the gate dielectrics. The model predicts reduced frequency dependence in the ultrahigh frequency range. The results and discussion also confirm the overall correctness of the dispersive transport framework in interpreting the NBTI mechanisms.


Related Articles

  • Visualization using scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of a metal–SiO2–Si3N4–SiO2–semiconductor flash memory. Honda, Koichiro; Cho, Yasuo // Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p013501 

    We have used scanning nonlinear dielectric microscopy to clarify the position of electrons and holes in the gate SiO2–Si3N4–SiO2 (ONO) film of a metal–ONO–semiconductor flash memory. The electrons were detected in the Si3N4 part of the ONO film, while the holes were...

  • Optical observation of donor-bound excitons in hydrogen-implanted ZnO. Lee, J.-K.; Nastasi, M.; Hamby, D. W.; Lucca, D. A. // Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p171102 

    The optical and structural properties of H or He implanted ZnO were investigated using low temperature photoluminescence (PL) and infrared spectroscopy (IR). H implantation is shown to influence the relative luminescence intensities of the donor bound excitons, enhancing the 3.361 eV peak, and...

  • Optical Properties of Semiconductors under Strong Pumping in the M-Band Region and Two-Photon Probing of the Biexciton State. Khadzhi, P. I.; Korovaı, A. V.; Tkachenko, D. V. // Physics of the Solid State;May2002, Vol. 44 Issue 5, p804 

    The behavior of the semiconductor dielectric susceptibility under the action of a strong laser pulse in the range of the luminescent M band and two-photon probe of a biexciton level is investigated. It is shown that the pronounced Autler–Towns effect occurs at the two-photon transition....

  • Hyperbolic Excitons in Semiconductors. Belyavsky, V. I.; Konchakov, R. A. // Physics of the Solid State;Sep2001, Vol. 43 Issue 9, p1621 

    The energy and damping of the quasi-stationary state corresponding to a hyperbolic exciton in a semiconductor crystal are calculated. It was assumed that the screened Coulomb potential describes the interaction between the electron and hole. The resonance conditions due to the hyperbolic exciton...

  • Mobility evaluation in transistors with charge-trapping gate dielectrics. Bersuker, G.; Zeitzoff, P.; Sim, J. H.; Lee, B. H.; Choi, R.; Brown, G.; Young, C. D. // Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p042905 

    Fast electron trapping in high-k gate dielectrics is shown to effectively increase the magnitude of the threshold voltage during the dc measurements of the drain current, which leads to underestimation of the intrinsic channel carrier mobility. An approach based on the pulse Id-Vg technique is...

  • Recombination Kinetics of the Dielectric Metastable EH-Liquid and Photoluminescence Spectra of Ge:Sb Samples. Chiba, M.; Fradkov, V. A.; Karuzskii, A. L.; Mityagin, Yu. A.; Perestoronin, A. V. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p143 

    To provide the observation of the metastable dielectric electron-hole liquid (DEHL) we suggest to achieve the high-enough total density of non-equilibrium pairs in the excited volume, which exceeds the density of DEHL, by pulse photoexcitation of the doped semiconductor. Doping decreases the...

  • Exciton developments. Perakis, Ilias E. // Nature;5/2/2002, Vol. 417 Issue 6884, p33 

    Examines the creation of cold excitons in a semiconductor. History on the study of atomic gases; Excitation of electrons; Types of semiconductor systems used.

  • Improved breakdown voltage and impact ionization in InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate. Kuan-Wei Lee; Nan-Ying Yang; Mau-Phon Houng; Yeong-Her Wang; Po-Wen Sze // Applied Physics Letters;12/26/2005, Vol. 87 Issue 26, p263501 

    The In0.52Al0.48As/In0.53Ga0.47As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10–15 nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase...

  • Reliability properties of metal-oxide-semiconductor capacitors using LaAlO3 high-k dielectric. Lingyen Yeh; Ingram Yin-Ku Chang; Chun-Heng Chen; Joseph Ya-Min Lee // Applied Physics Letters;10/19/2009, Vol. 95 Issue 16, p162902 

    In this study, metal-oxide-semiconductor (MOS) capacitors with high dielectric constant LaAlO3 film were fabricated. Furthermore, the characteristic time-to-breakdown, TBD, of the MOS capacitors was investigated. The TBD was measured and the corresponding Weibull slopes, β, of the MOS...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics