A low-cost method of forming epitaxy SiGe on Si substrate by laser annealing

Ong, C. Y.; Pey, K. L.; Ong, K. K.; Tan, D. X. M.; Wang, X. C.; Zheng, H. Y.; Ng, C. M.; Chan, L.
February 2009
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p082104
Academic Journal
In this letter, a low-cost alternative for forming high grade silicon germanium (SiGe) by a laser-induced crystallization of an amorphous Ge layer deposited directly on Si+ preamorphized implantation Si substrate is demonstrated. The results show that a fully strained epitaxial SiGe layer on the Si (100) substrate can be obtained at laser fluence above the epitaxial threshold. This is due to a liquid-phase epitaxial regrowth process of the laser annealing induced melted layer. Below the epitaxial threshold, polycrystalline SiGe is formed due to explosive recrystallization process. Simultaneous boron activation is achieved with the SiGe formation, a result due to the high temperature induced by the laser annealing.


Related Articles

  • Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature. Feng, Jiagui; Wagner, Sean R.; Zhang, Pengpeng // Scientific Reports;6/19/2015, p10310 

    Freestanding silicene, a monolayer of Si arranged in a honeycomb structure, has been predicted to give rise to massless Dirac fermions, akin to graphene. However, Si structures grown on a supporting substrate can show properties that strongly deviate from the freestanding case. Here, combining...

  • Atomic mechanisms of grain boundary diffusion: Low versus high temperatures. Suzuki, A.; Mishin, Y. // Journal of Materials Science;Jun2005, Vol. 40 Issue 12, p3155 

    We analyze recent results of atomistic computer simulations of grain boundary (GB) diffusion in metals. At temperatures well below the bulk melting point T m GB diffusion occurs by random walk of individual vacancies and self-interstitials. Both defects are equal participants in the diffusion...

  • Development of GaAs Epitaxy from Bulk to Ultrathin Films. Growth for Nanostructure Devices. Nishizawa, Jun-Ichi; Kurabayashi, Toru // Russian Physics Journal;Jun2003, Vol. 46 Issue 6, p559 

    The effects of stoichiometry on various features of III–V compounds are investigated. It is shown experimentally that the optimum vapor pressure of V elements minimizes the deviation from the stoichiometric composition. Vapor pressure control technology is applied not only to the liquid...

  • Crystal Growth and Properties of Cd1 – xZnxAs2 Solid Solutions. Marenkin, S. F.; Mikhailov, S. G.; Morozova, V. A.; Palkina, K. K.; Koshelev, O. G. // Inorganic Materials;Oct2003, Vol. 39 Issue 10, p1024 

    Cd1 – xZnxAs2 (x = 0.03, 0.05, 0.06) single crystals are grown by the Bridgman method, and their optical absorption spectra are measured. The introduction of Zn is shown to increase the band gap of CdAs2, by up to ≃14 meV at x = 0.06. The highest content of ZnAs2 incorporated into...

  • Synchrotron Diffraction topography in Studying of the Defect Structure in Crystals Grown by the Czochralski Method. WIERZCHOWSKI, W.; WIETESKA, K.; MALINOWSKA, A.; WIERZBICKA, E.; LEFELD-SOSNOWSKA, M.; ŚWIRKOWICZ, M.; ŁUKASIEWICZ, T.; PAJĄCZKOWSKA, A.; PAULMANN, C. // Acta Physica Polonica, A.;Aug2013, Vol. 124 Issue 2, p350 

    The synchrotron diffraction topography had been widely used for investigation of the structural defects in crystals grown by the Czochralski method. Similarly as conventional diffraction topography, the synchrotron topography consists in recording with high spatial resolution of the beam formed...

  • Non-isothermal crystallization of K2O·TiO2·3GeO2 glass. Živanović, V. D.; Grujić, S.; Tošić, M.; Blagojević, N.; Nikolić, J. // Journal of Thermal Analysis & Calorimetry;May2009, Vol. 96 Issue 2, p427 

    The crystallization of K2O·TiO2·3GeO2 glass under non-isothermal condition was studied. In powdered glass with particle sizes less than 0.15 mm, surface crystallization was dominant and an activation energy of crystal growth of Ea,s=327±50 kJ mol−1 was calculated. In the size...

  • Ab initio-based study for adatom kinetics on AlN(0001) surfaces during metal-organic vapor-phase epitaxy growth. Akiyama, Toru; Nakamura, Kohji; Ito, Tomonori // Applied Physics Letters;6/18/2012, Vol. 100 Issue 25, p251601 

    The kinetics of Al and N adatoms on reconstructed AlN(0001) surfaces under growth conditions is investigated by performing first-principles pseudopotential calculations. Our calculations reveal that the adsorption of Al adatom strongly depends on the surface reconstruction while its diffusion is...

  • High-Temperature Zinc Doping of Silicon from Zinc-Containing SiO2 Films. Voronkova, G. M.; Zuev, A. V.; Zuev, V. V.; Kiryukhin, A. D.; Chepik, L. F.; Troshina, E. P. // Inorganic Materials;Sep2003, Vol. 39 Issue 9, p904 

    Experimental evidence is presented that high-temperature annealing of Zn-containing SiO2 films on Si gives rise to phase separation, accompanied by the formation of Zn-enriched bands. Appreciable amounts of zinc (sufficient to change the conductivity type of Si and to raise its resistivity)...

  • Features of growing epitaxial layers from solid solutions based on indium and aluminium arsenides. Yodgorova, D. M.; Karimov, A. V. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2004, Vol. 7 Issue 4, p377 

    Growing the epitaxial layers that contain the aluminium or indium has its specific features. So, the epitaxial layers prepared using the method of liquid-phase epitaxy at high (0.1 to 0.2 at. %) contents of a replacing element can possess a phase non-uniform boundary interface or goffered...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics