TITLE

Current-voltage characteristics of poly(3-hexylthiophene) diodes at room temperature

AUTHOR(S)
Giulianini, Michele; Waclawik, Eric R.; Bell, John M.; Motta, Nunzio
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p083302
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the analysis of current-voltage characteristics of regioregular poly(3-hexylthiophene) diodes. Experimental curves were fitted to two models, to take into account at low-moderate electric fields Schottky behavior mixed with space charge limited current (SCLC) regime and, at higher fields, trap-free SCLC. The results provide a description of IV curves over five decades, along with the determination of zero field and effective mobility and the field dependence prefactor. Forward and reverse IV measurements highlighted the presence of shallow and deep localized states inside the band gap. The latter enhance the current over time and have been modeled as an inductorlike element.
ACCESSION #
43230326

 

Related Articles

  • Active region of CdTe X-/?-ray detector with Schottky diode. Kosyachenko, L. A.; Maslyanchuk, O. L. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2005, Vol. 8 Issue 2, p45 

    It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated maimer upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics...

  • Current-voltage characteristics for lead zirconate titanate bulk ceramics. Balke, Nina; Granzow, Torsten; Rödel, Jürgen // Journal of Applied Physics;Sep2008, Vol. 104 Issue 5, p054120 

    Current-voltage characteristics have been obtained on lead zirconate titanate bulk ceramics using robust measurement techniques separating polarization effects from actual charge transport. Measurement of the electrical conduction upon both increase and decrease in the electric field shows that...

  • Spin injection and diffusion in silicon based devices from a space charge layer. Ghosh, Joydeep; Sverdlov, Viktor; Windbacher, Thomas; Selberherr, Siegfried // Journal of Applied Physics;2014, Vol. 115 Issue 17, p17C503-1 

    We have performed simulations on electron spin transport in an n-doped silicon bar with spin-dependent conductivity with or without the presence of an external electric field. We further consider three cases like charge neutrality, charge accumulation, and charge depletion at one boundary and...

  • Space-charge-limited current in organic light emitting diodes. Torricelli, Fabrizio; Zappa, Dario; Colalongo, Luigi // Applied Physics Letters;3/15/2010, Vol. 96 Issue 11, p113304 

    A physically based mathematical model for the dc current of single-carrier organic light emitting diodes is presented. The model accounts for the most important physical quantities that influence the carrier mobility and thus the device current itself: temperature, charge carrier concentration,...

  • Electron emission in a flat cathode-curved anode system in the space-charge-limited current regime. Boltachev, G. Sh.; Zubarev, N. M. // Technical Physics Letters;Nov2008, Vol. 34 Issue 11, p934 

    The process of electron emission in a vacuum diode with curved cathode in the space-charge-limited current regime has been theoretically studied. The space charge density, electric field, and velocity field distributions in the interelectrode gap are determined by means of expansion with respect...

  • The Effect of a Corona Discharge on a Lightning Attachment. Aleksandrov, N. L.; Bazelyan, E. M.; Raizer, Yu. P. // Plasma Physics Reports;Jan2005, Vol. 31 Issue 1, p75 

    The interaction between the lightning leader and the space charge accumulated near the top of a ground object in the atmospheric electric field is considered using analytical and numerical models developed earlier to describe spark discharges in long laboratory gaps. The specific features of a...

  • Simulation of the formation of a runaway electron beam in an overvolted gas gap breakdown. Shklyaev, V. A.; Belomyttsev, S. Ya.; Ryzhov, V. V. // Journal of Applied Physics;Dec2012, Vol. 112 Issue 11, p113303 

    The paper reports on numerical simulation to inquire into the breakdown of a gas-filled diode in a highly inhomogeneous electric field. It is shown that early in the breakdown a runaway electron beam (RAEB) is formed in the diode and this strongly affects the rate of breakdown development. The...

  • Electrical properties of photodiodes based on p-GaSb/ p-GaInAsSb/ N-GaAlAsSb heterojunctions. Ahmetoglu, M.; Kaynak, G.; Andreev, I. A.; Kunitsyna, E. V.; Mikhailova, M. P.; Yakovlev, Yu. P. // Technical Physics Letters;Nov2008, Vol. 34 Issue 11, p937 

    We have studied the electrical characteristics of photodiodes based on p-GaSb/ p-GaInAsSb/ N-GaAlAsSb heterojunctions and investigated the mechanisms of current transfer in these heterostructures at various temperatures. A comparison of the theoretical results and experimental data showed that...

  • Effective Excitation Cross Section and Lifetime of Er3+ Ions in Si : Er Light-Emitting Diodes Fabricated by Sublimation Molecular-Beam Epitaxy. Remizov, D. Yu.; Shmagin, V. B.; Antonov, A. V.; Kuznetsov, V. P.; Krasil'nik, Z. F. // Physics of the Solid State;Jan2005, Vol. 47 Issue 1, p98 

    A series of Si : Er electroluminescent diode structures is fabricated by sublimation molecular-beam epitaxy. The diode structures efficiently emit at a wavelength of 1.5μm under conditions of p–n junction breakdown at room temperature. The effective cross section of excitation of Er3+...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics