TITLE

The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

AUTHOR(S)
Di Zhu; Jiuru Xu; Noemaun, Ahmed N.; Jong Kyu Kim; Schubert, E. Fred; Crawford, Mary H.; Koleske, Daniel D.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p081113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs). The minimum ideality factor of 2.4 is obtained when all QBs are doped. It is shown that polarization-induced triangular band profiles of the undoped QBs are the major cause of the high ideality factors in GaInN/GaN LEDs. Numerical simulations show excellent agreement with the measured ideality factor value and its dependence on QB doping.
ACCESSION #
43230311

 

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