TITLE

Effects of film thickness on manganite film-based heterjunctions

AUTHOR(S)
Lü, W. M.; Wei, A. D.; Sun, J. R.; Chen, Y. Z.; Shen, B. G.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p082506
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Effects of film thickness on interfacial barrier have been studied for the La0.67Ca0.33MnO3/SrTiO3:Nb and La0.67Sr0.33MnO3/SrTiO3:Nb junctions. In addition to the evolution of the transport behavior from electron tunneling to thermionic emission, increase in film thickness from ∼5 to ∼50 nm causes a significant growth of interfacial barrier as revealed by photoresponse experiments, and the maximum change in interfacial barrier is ∼13% for La0.67Ca0.33MnO3/SrTiO3:Nb and ∼45% for La0.67Sr0.33MnO3/SrTiO3:Nb. A linear relation between interfacial barrier and lattice constant of the films is further found, which suggests the influence of lattice strains on interfacial barrier. Qualitative explanations are given.
ACCESSION #
43230301

 

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