Effects of film thickness on manganite film-based heterjunctions

Lü, W. M.; Wei, A. D.; Sun, J. R.; Chen, Y. Z.; Shen, B. G.
February 2009
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p082506
Academic Journal
Effects of film thickness on interfacial barrier have been studied for the La0.67Ca0.33MnO3/SrTiO3:Nb and La0.67Sr0.33MnO3/SrTiO3:Nb junctions. In addition to the evolution of the transport behavior from electron tunneling to thermionic emission, increase in film thickness from ∼5 to ∼50 nm causes a significant growth of interfacial barrier as revealed by photoresponse experiments, and the maximum change in interfacial barrier is ∼13% for La0.67Ca0.33MnO3/SrTiO3:Nb and ∼45% for La0.67Sr0.33MnO3/SrTiO3:Nb. A linear relation between interfacial barrier and lattice constant of the films is further found, which suggests the influence of lattice strains on interfacial barrier. Qualitative explanations are given.


Related Articles

  • Dominant factors limiting efficiency of optical spin detection in ZnO-based materials. Chen, W. M.; Buyanova, I. A.; Murayama, A.; Furuta, T.; Oka, Y.; Norton, D. P.; Pearton, S. J.; Osinsky, A.; Dong, J. W. // Applied Physics Letters;3/3/2008, Vol. 92 Issue 9, p092103 

    Two dominant factors limiting efficiency of optical spin detection in ZnO-based materials system are identified from time-resolved optical orientation and magneto-optical studies. The first is related to the fundamental band structure of the materials characterized by a weak spin-orbit...

  • Optical Enhancement of 15N Nuclear Magnetic Resonance in Zinc-blende Ga15N. Morris, R. D.; Kent, A. J.; Geen, H. L.; Foxon, C. T.; Novikov, S. V. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1343 

    We have observed enhancement of the nuclear dipolar alignment of 15N in cubic Ga15N by optical pumping. Illumination of the sample with polarized band-gap light creates spin polarization of the electronic conduction band. Polarization is transferred to the 15N nuclei by Overhauser-type...

  • Mechanically and optically controlled graphene valley filter. Fenghua Qi; Guojun Jin // Journal of Applied Physics;2014, Vol. 115 Issue 17, p173701-1 

    We theoretically investigate the valley-dependent electronic transport through a graphene monolayer modulated simultaneously by a uniform uniaxial strain and linearly polarized light. Within the Floquet formalism, we calculate the transmission probabilities and conductances of the two valleys....

  • High Performance AlInGaAs/AlGaAs Photocathode. Mamaev, Yu. A.; Gerchikov, L. G.; Yashin, Yu. P.; Vasiliev, D. A.; Kuzmichev, V. V.; Ustinov, V. M.; Zhukov, A. E.; Mikhrin, V. S. // AIP Conference Proceedings;2/6/2008, Vol. 980 Issue 1, p85 

    New photocathode for highly polarized electron emission has been developed, fabricated and studied. Polarized electron source is based on short-period strained AlInGaAs/AlGaAs superlattice grown by MBE method. Deformation of AlInGaAs quantum well results in 85 meV energy splitting between heavy...

  • Response to “Comment on ‘Interpretation of Fermi level pinning on 4H–SiC using synchrotron photoemission spectroscopy’ ” [Appl. Phys. Lett. 85, 2661 (2004)]. Sang Youn Han; Jong-Lam Lee // Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2663 

    Presents a response to a commentary regarding the interpretation of Fermi level pinning on 4H-SiC using synchroton photoemission spectroscopy. Finding that Fermi level (Ef) pinning at the surface of p-type SiC originated from hole trap (H1); Claim that 4-A-thick Ni layer deposited on SiC was too...

  • Comment on “Interpretation of Fermi level pinning on 4H–SiC using synchrotron photoemission spectroscopy” [Appl. Phys. Lett. 84, 538 (2004)]. Yow-Jon Lin; Chih-Kuo Tseng // Applied Physics Letters;9/27/2004, Vol. 85 Issue 13, p2661 

    Presents a commentary regarding Fermi level pinning on 4H-SiC using synchroton photoemission spectroscopy. Claim that the Fermi level (Ef) pinning at the surface of p-type SiC (p-sic) originated from two kinds of hole traps in p-sic; Assertion that important features of the problem are...

  • Electron energy band alignment at the (100)Si/MgO interface. Afanas'ev, V. V.; Stesmans, A.; Cherkaoui, K.; Hurley, P. K. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p052103 

    The electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally...

  • Urbach tails of valence and conductivity bands and optical spectra of hexagonal InN near the fundamental band gap. Klochikhin, A.; Davydov, V. Yu.; Emtsev, V. V.; Mudryi, A. V. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p275 

    We suggest a model approach that takes into account the localized states of electrons and holes including the states of Urbach tails. The necessity of such consideration arose because a new generation of InN samples has the electron concentration of the order of 1 · 1018 cm-3 and less, which...

  • Perpendicular hot electron transport in the spin-valve photodiode. Huang, Biqin; Appelbaum, Ian // Journal of Applied Physics;8/1/2006, Vol. 100 Issue 3, p034501 

    The spin-valve photodiode is a ferromagnetic metal multilayer/n-type semiconductor Schottky device operated by photoexciting hot electrons in the metal and causing internal photoemission (IPE) into the semiconductor. Simple IPE theory predicts that the magnitude of the spin-valve effect...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics