TITLE

One-step synthesis of Ge–SiO2 core-shell nanowires

AUTHOR(S)
Sutter, Eli; Camino, Fernando; Sutter, Peter
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p083109
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on a one-step process based on thermal evaporation at moderate temperatures that yields single-crystalline Ge nanowires (NWs) encapsulated in SiO2 shells. The dielectric shell forms around the Ge NW core during the NW growth process itself, an advantage in the assembly of NW devices such as surround-gate NW field-effect transistors (FETs). The formation of the core-shell structures proceeds via an unconventional vapor-liquid-solid process involving root growth of SiGe NWs and selective Si oxidation by background oxygen in the reactor. Electrical measurements of the p-type Ge–SiO2 FET devices show efficient gate control and hole mobilities of 20 cm2/V s.
ACCESSION #
43230297

 

Related Articles

  • Large enhancement in photon detection sensitivity via Schottky-gated CdS nanowire nanosensors. Te-Yu Wei; Chi-Te Huang; Hansen, Benjamin J.; Yi-Feng Lin; Lih-Juann Chen; Shih-Yuan Lu; Zhong Lin Wang // Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p013508 

    The Schottky contact based photon detection was demonstrated using CdS (visible light responsive), silicon (indirect n-type oxygen-non-adsorbing), and CuO (indirect p-type oxygen-adsorbing) nanowire nanosensors. With changing one of the two nanowire-electrode contacts from ohmic to Schottky,...

  • Reduced graphene oxide produced by rapid-heating reduction and its use in carbon-based field-effect transistors. Lee, In-yeal; Wang, Jianwei; Kim, Gil-Ho; Park, Jin-Hong; Kannan, E. S.; Jang, Ji-Hoon; Kwon, Young-Uk // Journal of Applied Physics;Aug2012, Vol. 112 Issue 3, p033701 

    Highly conductive and water-dispersible sheets of reduced graphene oxide (RGO) were produced by rapidly heating graphene oxide (GO) paper at a low temperature (300 °C) for a short processing time of 3 s. The GO paper was thermally treated during the rapid-heating reduction process and,...

  • Depletion-mode ZnO nanowire field-effect transistor. Heo, Y. W.; Tien, L. C.; Kwon, Y.; Norton, D. P.; Pearton, S. J.; Kang, B. S.; Ren, F. // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2274 

    Single ZnO nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated using nanowires grown by site selective molecular-beam epitaxy. When measured in the dark at 25°C, he depletion-mode transistors exhibit good saturation behavior, a threshold voltage of ∼-3...

  • Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations. Jing Wang; Rahman, Anisur; Ghosh, Avik; Klimeck, Gerhard; Lundstrom, Mark // Applied Physics Letters;2/28/2005, Vol. 86 Issue 9, p093113 

    In this letter, we explore the band structure effects on the performance of ballistic silicon nanowire transistors (SNWTs). The energy dispersion relations for silicon nanowires are evaluated with an sp3d5s* tight binding model. Based on the calculated dispersion relations, the ballistic...

  • Realization of dual-gated Ge–SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain. Junghyo Nah; Liu, E.-S.; Shahrjerdi, D.; Varahramyan, K. M.; Banerjee, S. K.; Tutuc, E. // Applied Physics Letters;2/9/2009, Vol. 94 Issue 6, pN.PAG 

    We demonstrate dual-gated germanium (Ge)-silicon germanium (SixGe1-x) core-shell nanowire (NW) field effect transistors (FETs) with highly doped source (S) and drain (D). A high-κ HfO2 gate oxide was deposited on the NW by atomic layer deposition, followed by TaN gate metal deposition. The S...

  • Hybrid ZnO nanowire networked field-effect transistor with solution-processed InGaZnO film. Jaehyun Yang; Myung Soo Lee; Hoo-Jeong Lee; Hyoungsub Kim // Applied Physics Letters;6/20/2011, Vol. 98 Issue 25, p253106 

    We examined the effect on the transistor properties of the spatial gaps between nanowires that may randomly exist in the nanonet-structured, ZnO transistor. A hybrid-type, ZnO nanowire-based transistor was fabricated by combining the nanonet-structured ZnO nanowire arrays with a...

  • Axial bandgap engineering in germanium-silicon heterostructured nanowires. Dayeh, Shadi A.; Dickerson, Robert M.; Picraux, S. Thomas // Applied Physics Letters;9/12/2011, Vol. 99 Issue 11, p113105 

    Large composition changes along the nanowire axial direction provide an additional degree of freedom for tailoring charge transport in semiconductor devices. We utilize 100% axial composition modulated germanium to silicon semiconductor nanowires to demonstrate bandgap-engineered Schottky...

  • Friction transfer deposition of ordered conjugated polymer nanowires and transistor fabrication. Li, S. P.; Newsome, C. J.; Russell, D. M.; Kugler, T.; Ishida, M.; Shimoda, T. // Applied Physics Letters;8/8/2005, Vol. 87 Issue 6, p062101 

    Monodisperse, ordered conjugated polymer nanowires were deposited by friction-transfer technique. Films that comprise such ordered polymer nanowires show a strong optical and electronic anisotropy due to the high compaction of molecule chains in the individual nanowires. Field-effect transistors...

  • Quantitative analysis of individual metal-CdSe-metal nanowire field-effect transistors. Skinner, Kwan; Dwyer, Chris; Washburn, Sean // Applied Physics Letters;3/17/2008, Vol. 92 Issue 11, p112105 

    Heterostructured metal-CdSe-metal nanowires were fabricated by sequential electrochemical deposition of layers of Au and the semiconductor CdSe. Nonlinear I-V curves were observed, and a parameter retrieval model was used to extract the majority carrier mobility of 0.5 cm2 V-1 s-1 for nanowires...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics