Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100)

Lovejoy, T. C.; Yitamben, E. N.; Shamir, N.; Morales, J.; Villora, E. G.; Shimamura, K.; Zheng, S.; Ohuchi, F. S.; Olmstead, M. A.
February 2009
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p081906
Academic Journal
Experimental studies of the surface morphology and electronic structure of bulk single crystals of the transparent and wide gap semiconductor gallium oxide (β-Ga2O3) have been conducted using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES). Atomically resolved STM and LEED results for the β-Ga2O3(100) surface clarify that the predominant surface termination contains both gallium and oxygen, and this surface does not exhibit a reconstruction. The valence band structure was obtained with ARPES and shows good agreement with existing theoretical works at the zone center and along the a* and c* directions, except that the calculated bandwidth is ∼7% too small. There is poorer agreement along the b* direction, where the experimental bands disperse more strongly than the calculations.


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