TITLE

Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100)

AUTHOR(S)
Lovejoy, T. C.; Yitamben, E. N.; Shamir, N.; Morales, J.; Villora, E. G.; Shimamura, K.; Zheng, S.; Ohuchi, F. S.; Olmstead, M. A.
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p081906
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Experimental studies of the surface morphology and electronic structure of bulk single crystals of the transparent and wide gap semiconductor gallium oxide (β-Ga2O3) have been conducted using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and angle-resolved photoemission spectroscopy (ARPES). Atomically resolved STM and LEED results for the β-Ga2O3(100) surface clarify that the predominant surface termination contains both gallium and oxygen, and this surface does not exhibit a reconstruction. The valence band structure was obtained with ARPES and shows good agreement with existing theoretical works at the zone center and along the a* and c* directions, except that the calculated bandwidth is ∼7% too small. There is poorer agreement along the b* direction, where the experimental bands disperse more strongly than the calculations.
ACCESSION #
43230289

 

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