ErAs epitaxial Ohmic contacts to InGaAs/InP

Singisetti, Uttam; Zimmerman, Jeramy D.; Wistey, Mark A.; Cagnon, Joël; Thibeault, Brian J.; Rodwell, Mark J. W.; Gossard, Arthur C.; Stemmer, Susanne; Bank, Seth R.
February 2009
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p083505
Academic Journal
We report epitaxial ErAs semimetal Ohmic contacts onto n-type In0.53Ga0.47As grown on InP. The contacts were formed by molecular beam epitaxial growth of ErAs on InAs/InGaAs. Transmission line measurements showed minimum specific contact resistivities of 1.5±0.4 Ω μm2 (horizontal specific contact resistivity ρH, 4.20 Ω μm) for the ErAs/InAs/InGaAs contact. The extracted contact resistance is larger than the true value because of the lateral oxidation of ErAs. The contacts degrade over time and at elevated temperatures because of the oxidation of the ErAs, making it difficult to use as surface contacts, but they are suitable as low-resistance buried contacts.


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