Structural analyses of strained SiGe wires formed by hydrogen thermal etching and Ge-condensation processes

Tezuka, Tsutomu; Toyoda, Eiji; Irisawa, Toshifumi; Hirashita, Norio; Moriyama, Yoshihiko; Sugiyama, Naoharu; Usuda, Koji; Takagi, Shin-ichi
February 2009
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p081910
Academic Journal
Strained SiGe-wire structures formed by a thermal oxidation of SiGe-on-insulator (SGOI) fins after an anisotropic gas etching in atmospheric hydrogen are investigated in terms of morphology, strain, and crystalline defects. It is found that vertical and smooth {110} sidewalls emerged on the SGOI fins after the hydrogen etching and that the SiGe wires consisted of a Si-rich core region and a surrounding Ge-rich layer formed by the Ge-condensation mechanism through the oxidation. Detailed strain analyses reveal that uniaxial and compressive strain accumulated in the Ge-rich layer via an elastic lattice deformation without generating dislocations.


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