Threshold voltage control of bottom-contact n-channel organic thin-film transistors using modified drain/source electrodes

Kitamura, Masatoshi; Kuzumoto, Yasutaka; Aomori, Shigeru; Kamura, Masakazu; Jong Ho Na; Arakawa, Yasuhiko
February 2009
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p083310
Academic Journal
Bottom-contact n-channel C60 thin-film transistors (TFTs) with drain/source electrodes modified by benzenethiol derivatives have been fabricated to investigate the influence of the modification on the transistor characteristics. Modification using methylbenzenethiol, aminobenzenethiol, and (dimethylamino)benzenethiol having electron-donating groups causes threshold voltages to shift to low voltages. In addition, the modification provides no significant decrease in saturation mobilities. A C60 TFT with (dimethylamino)benzenethiol-modified electrodes has a low threshold voltage of 5.1 V as compared to that of 16.8 V for a TFT with nonmodified electrodes. The threshold-voltage shift is probably because the modification reduces electron-injection barrier height and improves electron injection into organic semiconductors.


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