TITLE

Internal field engineering in CdZnO/MgZnO quantum well structures

AUTHOR(S)
Seoung-Hwan Park; Ahn, Doyeol
PUB. DATE
February 2009
SOURCE
Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p083507
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electronic and optical properties of CdZnO/MgZnO quantum well (QW) structures with the depolarization of an internal field are investigated by using the non-Markovian gain model. The Mg composition is selected to give zero internal field for a given Cd composition. The Mg content to give zero internal field is found to increase with increasing Cd content. The peak gain is improved with increasing Cd composition in a range of Cd<0.07 because a quasi-Fermi-level separation rapidly increases with the Cd composition. However, it begins to decrease when the Cd composition exceeds 0.07.
ACCESSION #
43230260

 

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