TITLE

Ion implantation induced defects in SiO[sub 2]: The applicability of the positron probe

AUTHOR(S)
Fujinami, M.; Chilton, N.B.
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/8/1993, Vol. 62 Issue 10, p1131
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the ion implantation induced defects in silicon dioxide using positron annihilation spectroscopy and electron spin resonance (ESR). Impact of the defects on metal oxide semiconductor electronic properties; Correlation between positron annihilation and ESR data; Release of atomic hydrogen and oxygen following ion implantation.
ACCESSION #
4323017

 

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