Ion implantation induced defects in SiO[sub 2]: The applicability of the positron probe

Fujinami, M.; Chilton, N.B.
March 1993
Applied Physics Letters;3/8/1993, Vol. 62 Issue 10, p1131
Academic Journal
Investigates the ion implantation induced defects in silicon dioxide using positron annihilation spectroscopy and electron spin resonance (ESR). Impact of the defects on metal oxide semiconductor electronic properties; Correlation between positron annihilation and ESR data; Release of atomic hydrogen and oxygen following ion implantation.


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