Picosecond carrier lifetime in erbium-doped-GaAs

Gupta, S.; Sethi, S.; Bhattacharya, P.K.
March 1993
Applied Physics Letters;3/8/1993, Vol. 62 Issue 10, p1128
Academic Journal
Assesses the dependence of picosecond carrier lifetime on erbium-doped gallium arsenide. Effect of high-dosage ion implantation on crystal structures; Use of secondary ion mass spectroscopy in verifying erbium incorporation; Presence of strong nonradiative recombination processes in the observed ultrashort carrier lifetimes.


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