Positive charge and interface state creation at the Si-SiO[sub 2] interface during low-fluence

Mir, Abdellah; Vuillaume, Dominique
March 1993
Applied Physics Letters;3/8/1993, Vol. 62 Issue 10, p1125
Academic Journal
Investigates the formation of positive charges and interface states at the silicon dioxide (SiO[sub 2]) interface during low-fluence electron injections. Occurrence of damages at SiO[sub 2] interfaces; Effect of band-gap ionization on positive charge formation; Use of vacuum emission spectroscopy in observing hot energy distribution.


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