TITLE

Modulation-doped In[sub 0.48]Al[sub 0.52]P/In[sub 0.2]Ga[sub 0.8]As field-effect transistors

AUTHOR(S)
Jenn-Ming Kuo; Yi-Jen Chan; Pavlidis, Dmitris
PUB. DATE
March 1993
SOURCE
Applied Physics Letters;3/8/1993, Vol. 62 Issue 10, p1105
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the modulation-doped field-effect transistors of indium aluminum phosphide/indium gallium arsenide heterostructures. Use of gas-source molecular beam epitaxy in examining gallium arsenide substrates; Characteristics of the device; Absence of DX centers inordinate numbers.
ACCESSION #
4323007

 

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