High-power buried InGaAsP/GaAs (lambda=0.8 mum) laser diodes

Garbuzov, D.Z.; Antonishkis, N. Ju.; Zhigulin, S.N.; Il'inskaya, N.D.; Kochergin, A.V.; Lifshitz, D.A.; Rafailov, E.U.; Fuksman, M.V.
March 1993
Applied Physics Letters;3/8/1993, Vol. 62 Issue 10, p1062
Academic Journal
Examines the buried indium gallium arsenic phosphide/gallium arsenide high-powered laser diodes. Occurrence of stable far field pattern at continuous wave output power; Absence of oxidizing aluminum compounds; Use of indium solder in molding lasers onto a copper heatsink.


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